ROHM RZQ050P01 Data Sheet

Summary

This datasheet details the RZQ050P01, a P-channel MOSFET engineered for high-performance power switching applications. Offering low on-resistance and stable operation at a 1.5V drive voltage, this component is ideal for electronic appliances and various circuit designs requiring robust switching capability. The manual provides comprehensive technical specifications, including absolute maximum ratings, electrical characteristics, body diode performance data, and detailed operating curves necessary for professional engineers designing reliable power management systems.

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1.5V Drive Pch MOSFET RZQ050P01 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET

TSMT6

1.0MAX

Features 0.950.95 0.7

1) Low on-resistance. 2) High power package.

3) Low voltage drive. (1.5V) (1) (2) (3)

1pin mark

Each lead has same dimensions

Abbreviated symbol : YF

Applications Switching

Packaging specifications Equivalent circuit

Package Taping (6) (5) (4)

Type Code TR

Basic ordering unit (pieces)

RZQ050P01

(1) Drain

(2) Drain (3) Gate

(4) Source (5) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (6) Drain

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Drain-source voltage −12 VVDSS Gate-source voltage ±10 VVGSS Continuous ±5 AID

Drain current

Pulsed ∗1 ±20 AIDP

Source current Continuous −1 AIS

(Body diode) ∗1

Pulsed −20 AISP Total power dissipation ∗2 1.25 WPD

Channel temperature °CTch

Range of Storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient 100∗ °C / WRth(ch-a) ∗ When mounted on a ceramic board.

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Page Summary Contents For ROHM RZQ050P01 Data Sheet

Page 1 1.5V Drive Pch MOSFET RZQ050P01 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT6 1.0MAX Features 0.950.95 0.7 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (...

Page 2 RZQ050P01 Data Sheet Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS=±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −12 ...

Page 3 RZQ050P01 Data Sheet Electrical characteristic curves TA TI IN -S -S TA TE TA TI IN -S -S TA TE IS TA S( )[m IS TA S( )[m IN : - D[ VDS=-6V Ta=25℃ VGS=-1.8V Pulsed Pulsed VGS=-1.5V VGS=-10V VGS=-1.3V ...

Page 4 RZQ050P01 Data Sheet TA TI IN -S -S TA TE IT [p F] IS TA S( )[m VDS=-6V Ta=25℃ Ta=25℃ Pulsed VDD=-6.0V Pulsed ID= -2.5A ID=-5.0A RG=10Ω Pulsed ID= -5.0A Ta=125℃ Ta= 75℃ Ta= 25℃ Ta=-25℃ GATE-SOURCE VOL...

Page 5 RZQ050P01 Data Sheet Measurement circuits Pulse Width VGS ID VGS trtd(on) tftd(off) ton toff Fig.15 Switching Time Measurement Circuit Fig.16 Switching Waveforms VGS ID IG(Const) Qgs Qgd Charge Fig.17...

Page 6 Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement wit...

Manual Details

Brand	ROHM
Pages	6
File Size	212.00 KB
Published	June 18, 2026

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Frequently Asked Questions

What is the maximum drain current rating (Pulsed)?

The Pulsed IDP can reach ±20 A.

Under what conditions should PD be calculated?

PD, or Total power dissipation, must not exceed 1.25 W for rated operation.

How do I measure the FET's maximum operating temperature?

The Channel temperature (Tch) has a maximum specified limit of 150°C.

Can this component be used in life-critical machinery?

No, it is explicitly noted that the product is not designed for equipment requiring extremely high levels of reliability such as medical or aerospace machinery.