ROHM RYM002N05 Data Sheet

Summary

The RYM002N05 is a high-speed Silicon N-channel MOSFET transistor designed for reliable switching applications in various electronic equipment, including audio visual and office automation devices. This manual provides comprehensive technical documentation, detailing absolute maximum ratings, electrical characteristics—such as gate threshold voltage and drain-source resistance—and performance graphs across multiple temperatures. It is essential reading for engineers and electronics developers who need to select or implement this ultra low voltage drive component into general-use electronic systems.

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0.9V Drive Nch MOSFET RYM002N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET VMT3

Features 1) High speed switing. 2) Small package(VMT3). 3) Ultra low voltage drive(0.9V drive).

Abbreviated symbol : QJ

Application Switching

Packaging specifications Inner circuit

Package Taping Type Code T2L Basic ordering unit (pieces)

RYM002N05

Absolute maximum ratings (Ta = 25C)

(1) Gate

(2) Source

Parameter Symbol Limits Unit

(3) Drain ∗1 ESD PROTECTION DIODE Drain-source voltage VDSS ∗2 BODY DIODE

Gate-source voltage VGSS 8 Continuous ID 200 m A

Drain current

Pulsed IDP *1 800 m A

Source current Continuous IS m A

(Body Diode) Pulsed ISP *1 m A Power dissipation PD *2 m W

Channel temperature Tch C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Ambient Rth (ch-a) C / W * Each terminal mounted on a recommended land.

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Page Summary Contents For ROHM RYM002N05 Data Sheet

Page 1 0.9V Drive Nch MOSFET RYM002N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET VMT3 Features 1) High speed switing. 2) Small package(VMT3). 3) Ultra low voltage drive(0.9V drive). Abbrev...

Page 2 RYM002N05 Data Sheet Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=8V, VDS=0V Drain-source breakdown voltage V (BR)DSS ID...

Page 3 RYM002N05 Data Sheet IC IN -S -S IC IN -S -S IS [m IS [m IN [A Electrical characteristics curves (Ta = 25C) n) n) VDS= 10V VGS= 4.5V VGS= 4.5V Pulsed VGS= 2.5V VGS= 1.5V Ta= 125°C VGS= 2.5V VGS= 1.2...

Page 4 RYM002N05 Data Sheet IT IN IM ns IT |Y fs | [ VDS= 10V VGS=0V Ta=25°C Pulsed Pulsed Pulsed ID= 0.01A 0.1 ID= 0.20A Ta= 125°C Ta=25°C Ta= 75°C Ta=25°C Ta= 25°C Ta=75°C Ta= 25°C Ta=125°C DRAIN-CURRE...

Page 5 RYM002N05 Data Sheet Measurement circuits Pulse width VGS ID VDS 90% 50% 50% RL VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching time measurement circuit Fig.1-2 Switching wavefor...

Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	6
File Size	317.04 KB
Published	July 22, 2026

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Frequently Asked Questions

What types of equipment is this MOSFET designed for?

It is intended for general-use electronic equipment such as audio visual, office automation, communication devices, and appliances.

Can I use this component in life-critical or safety systems?

No. It should not be used with any equipment where failure may result in a direct threat to human life (e.g., medical instruments or aerospace machinery).

What is the absolute maximum Drain-Source voltage (Vds)?

The absolute maximum rating for the Drain-source voltage (VDSS) is 50 V.

What safety measures must I implement during installation?

Implement safety controls like derating, redundancy, fire control, and fail-safe designs to prevent physical injury or fire damage.