ROHM RXH125N03 Data Sheet

Summary

Optimize your power circuits with this low on-resistance N-channel MOSFET designed for efficient switching applications. This comprehensive manual, featuring detailed electrical characteristics and absolute maximum ratings, provides critical data on performance curves, thermal resistance, and switching timings. It is essential reading for electrical engineers and power electronics designers selecting highly reliable surface mount components for complex circuit development.

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Data Sheet

4V Drive Nch MOSFET RXH125N03 Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET SOP8

Features 1) Low on-resistance. 2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (SOP8). (1) (4)

Application Switching

Packaging specifications Inner circuit

Package Taping (8) (7) (6) (5)

Type Code TB Basic ordering unit (pieces) RXH125N03

(1) Source ∗2 (2) Source (3) Source

(4) Gate ∗1

(5) Drain

Absolute maximum ratings (Ta = 25C)

(6) Drain

(7) Drain

Parameter Symbol Limits Unit

(8) Drain ∗1 ESD PROTECTION DIODE

Drain-source voltage VDSS ∗2 BODY DIODE

Gate-source voltage VGSS 20 Continuous ID 12.5

Drain current

Pulsed IDP *1 36

Source current Continuous IS 1.6 (Body Diode) Pulsed ISP *1

Power dissipation PD *2 2.0

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Ambient Rth (ch-a) 62.5 C / W *Mounted on a ceramic board.

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Page Summary Contents For ROHM RXH125N03 Data Sheet

Page 1 Data Sheet 4V Drive Nch MOSFET RXH125N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Packa...

Page 2 Data Sheet RXH125N03 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID...

Page 3 Data Sheet RXH125N03 Electrical characteristic curves (Ta=25C) ra in rr ta ti ra in -S rc -S ta te is ta ta ti ra in -S rc -S ta te is ta Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Outpu...

Page 4 Data Sheet RXH125N03 rc rr rw rd ra fe it ta it in im Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics VDS=10V VDS=10V pulsed pulsed Ta=125°C Ta=75°C Ta=25°C ...

Page 5 Data Sheet RXH125N03 rm li ra ie rm is ta t) it Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100...

Page 6 Data Sheet RXH125N03 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% RL VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Wavefor...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.11 MB
Published	June 04, 2026

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Frequently Asked Questions

What is the surface mount package type for this MOSFET?

It utilizes a small Surface Mount Package called SOP8 (8) (5).

What is the maximum drain-source voltage (V_DSS)?

The Drain-Source breakdown voltage limit (V_DSS) is 30 V.

How must I mount this component for proper thermal dissipation?

It must be mounted on a ceramic board, which has a listed thermal resistance to ambient Rth(ch-a) of 62.5 °C / W.

What is the typical static drain-source on-state resistance (R_DS(on))?

The typical on-resistance (R_DS(on)) is 13.3 mΩ when I = 12.5A and V = 4.5V.