ROHM RXH090N03 Data Sheet

Summary

The RXH090N03 is a compact N-channel MOSFET designed for high-efficiency power switching applications. Featuring low on-resistance and integrated protection diodes in a tiny SOP8 package, this component ensures reliable performance in demanding circuitry. This technical manual provides comprehensive documentation covering all electrical characteristics, detailed switching analysis curves, thermal resistance data, and application schematics. It is essential reading for electronics engineers and designers integrating high-performance power management components into their next project.

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Data Sheet

4V Drive Nch MOSFET RXH090N03 Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET SOP8

Features 1) Low on-resistance. 2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (SOP8). (1) (4)

Application Switching

Packaging specifications Inner circuit

Package Taping (8) (7) (6) (5)

Type Code TB Basic ordering unit (pieces)

(1) Source

RXH090N03 (2) Source

(3) Source (4) Gate (5) Drain ∗1 (6) Drain

Absolute maximum ratings (Ta = 25C) (7) Drain

(8) Drain (1) (2) (3) (4)

Parameter Symbol Limits Unit

∗1 ESD PROTECTION DIODE Drain-source voltage VDSS ∗2 BODY DIODE

Gate-source voltage VGSS 20

Continuous ID 9

Drain current

Pulsed IDP *1 36

Source current Continuous IS 1.6

(Body Diode) Pulsed ISP *1

Power dissipation PD *2 2.0

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Ambient Rth (ch-a) 62.5 C / W *Mounted on a ceramic board.

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Page Summary Contents For ROHM RXH090N03 Data Sheet

Page 1 Data Sheet 4V Drive Nch MOSFET RXH090N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Packa...

Page 2 Data Sheet RXH090N03 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID...

Page 3 Data Sheet RXH090N03 IC IN -S -S Electrical characteristic curves (Ta=25C) IS (o IN [A IN [A Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) VGS= 2.8V VGS= 2.8V VGS= ...

Page 4 Data Sheet RXH090N03 IC IN -S -S IT IN IM IS (o Fig.7 Static Drain-Source On-State Fig.8 Forward Transfer Admittance Resistance vs. Drain Current(Ⅳ) vs. Drain Current VGS= 4.0V VDS= 10V Pulsed Ta=125°...

Page 5 Data Sheet RXH090N03 IZ IE IS t) Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Aera Operation in this area is limited by RDS(ON) (VGS=10V) PW=100us PW=1ms PW = 10ms...

Page 6 Data Sheet RXH090N03 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms ...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.04 MB
Published	July 07, 2026

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Frequently Asked Questions

What safety measures should I take when using this product?

Due to the risk of chip aging and breakdown in an electrified environment, you must design an ESD protection circuit.

What is the maximum drain-source voltage (Vdss)?

The absolute maximum rating for the drain-source voltage (Vdss) is 30 V.

How must I mount the MOSFET to ensure proper operation?

It must be mounted on a ceramic board. The thermal resistance (Rth(ch-a)) is listed as 62.5 °C/W.

What is the nominal on-state resistance (RDS(on))?

The typical static drain-source on-state resistance (RDS(on)) at I=9A and V=4.5V is 17 mΩ.