ROHM RXH070N03 Data Sheet

Summary

The RXH070N03 is a surface-mount N-channel MOSFET designed for high-efficiency power switching applications. This comprehensive data sheet provides electrical engineers with detailed specifications, covering absolute maximum ratings, low on-resistance characteristics, switching behavior curves, and thermal management data. It is the essential resource for designing reliable, robust power electronics circuits requiring dependable solid-state switching performance.

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Data Sheet

4V Drive Nch MOSFET RXH070N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8

Features 1) Low on-resistance. 2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (SOP8). (1) (4)

Application Switching

Packaging specifications Inner circuit

Package Taping Type Code TB Basic ordering unit (pieces)

RXH070N03

(1) Source (2) Source (3) Source ∗1 (4) Gate Absolute maximum ratings (Ta = 25C) (5) Drain (6) Drain

Parameter Symbol Limits Unit (7) Drain

∗1 ESD PROTECTION DIODE

(8) Drain

Drain-source voltage VDSS ∗2 BODY DIODE

Gate-source voltage VGSS 20

Continuous ID 7

Drain current

Pulsed IDP *1 18

Source current Continuous IS 1.6

(Body Diode) Pulsed ISP *1

Power dissipation PD *2 2.0

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Ambient Rth (ch-a) 62.5 C / W *Mounted on a ceramic board.

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Page Summary Contents For ROHM RXH070N03 Data Sheet

Page 1 Data Sheet 4V Drive Nch MOSFET RXH070N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Packa...

Page 2 Data Sheet RXH070N03 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID...

Page 3 Data Sheet RXH070N03 Electrical characteristic curves (Ta=25C) IC IN -S -S IN [A IS (o IN [A Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Ta=25°C VGS= 2.8V Ta=25°C...

Page 4 Data Sheet RXH070N03 IT IN IM IC IN -S -S IS (o Fig.8 Forward Transfer Admittance Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) vs. Drain Current VDS= 10V Pulsed Ta=125°C Ta=75°C ...

Page 5 Data Sheet RXH070N03 IZ IE IS t) Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Aera Operation in this area is limited by RDS(ON) (VGS=10V) PW=100us Crss PW=1ms Coss...

Page 6 Data Sheet RXH070N03 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% RL VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Wavefor...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.10 MB
Published	June 20, 2026

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Frequently Asked Questions

Is ESD protection needed when using this component?

Yes, the product might cause chip aging and breakdown in electrified environments; an ESD protection circuit must be designed.

What are the operational temperature limits?

The working range of the component is -55 to +150°C. The rated storage temperature is -55 to +150°C.

How should I mount this MOSFET for optimal heat dissipation?

It must be mounted on a ceramic board, and its thermal resistance (Rth) is specified at 62.5 °C/W.

What are the absolute maximum drain-source voltage ratings?

The parameter V_DSS has an absolute maximum limit of 30V.