ROHM RTQ045N03 Data Sheet
Summary
Explore the RTQ045N03 N-channel MOS FET, an ultra-efficient surface mount transistor ideal for demanding power switching and DC/DC converter applications. This comprehensive manual provides engineers with all necessary details, including absolute maximum ratings, low on-resistance measurements, detailed electrical characteristics, and full performance curves. Designed for reliable high-power operation in restricted spaces, this component ensures optimal efficiency and includes built-in ESD protection diodes for robust system design. Necessary for power electronics designers seeking high-performance switching solutions.
Page 1 Text Content
RTQ045N03
Transistors
2.5V Drive Nch MOS FET RTQ045N03
Structure External dimensions (Unit : mm)
Silicon N-channel
TSMT6
MOS FET
1.0MAX
Features 1) Low on-resistance.
2) Built-in G-S Protection Diode. (1) (2) (3)
1pin mark
3) Small Surface Mount Package (TSMT6) . 0.4 0.16
Each lead has same dimensions
Abbreviated symbol : QM
Application Power switching, DC / DC converter.
Packaging specifications Equivalent circuit
Package Taping (6) (5) (4) (6) (5) (4)
Type Code TR
Basic ordering unit (pieces) ∗2
RTQ045N03
(1) Drain (2) Drain
Absolute maximum ratings (Ta=25°C) (1) (2) (3) (3) Gate
(4) Source Parameter Symbol Limits Unit ∗1 ESD PROTECTION DIODE (5) Drain ∗2 BODY DIODE (6) Drain
Drain-source voltage VVDSS
∗A protection diode is included between the gate and
Gate-source voltage VVGSS
the source terminals to protect the diode against static Continuous ±4.5 AID electricity when the product is in use. Use the protection Drain current circuit when the fixed voltages are exceeded.
Pulsed ±18 AIDP
Continuous Source current 1.0 AIS
(Body diode) ∗1
Pulsed 4.0 AISP Total power dissipation ∗2 1.25 WPD
Channel temperature °CTch
Storage temperature −55~+150 °CTstg
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board.
Thermal resistance
Parameter Symbol Limits Unit
Channel to ambient °C / WRth (ch-a) ∗ Mounted on a ceramic board.
Rev.C 1/3
Page Summary Contents For ROHM RTQ045N03 Data Sheet
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 4 |
| File Size | 66.71 KB |
| Published | June 18, 2026 |
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Frequently Asked Questions
How should I mount this transistor for proper heat dissipation?
The device must be mounted on a ceramic board to ensure thermal performance.
What is the maximum rated drain current and what are the resistive limits?
The continuous drain current is 4.5 A, and the minimum RDS(on) resistance is 32 mΩ.
Is this FET appropriate for critical life-support machinery?
No; consult a sales representative if you need extremely high reliability required by sensitive equipment.
What are the permissible operational temperature ranges?
The storage temperature range (Tstg) is listed from −55°C to +150°C.