ROHM RTF025N03 Data Sheet
Summary
The RTF025N03 is a highly efficient, N-channel MOSFET transistor designed for power switching applications requiring low voltage drive capabilities and compact size. Featuring impressively low on-resistance and an energy-saving surface mount package, it offers reliable performance in space-constrained electronic designs. This manual provides comprehensive technical details, including absolute maximum ratings, detailed electrical characteristics (such as On-state resistance), and body diode specifications. It is ideal for circuit designers building general consumer electronics, office automation equipment, or communication devices that need robust power control solutions.
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RTF025N03
Transistors
2.5V Drive Nch MOSFET RTF025N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET
TUMT3
Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive).
(1) Gate (2) Source Abbreviated symbol : PL
Applications
(3) Drain
Switching
Packaging specifications Inner circuit
Package Taping
Type Code TL
Basic ordering unit (pieces)
RTF025N03 (1) ∗2 ∗1
0. 2M ax
(1) Gate ∗1 ESD PROTECTION DIODE (2) Source ∗2 BODY DIODE (3) Drain
Absolute maximum ratings (Ta=25°C)
Parameter Symbol Limits Unit
Drain-source voltage VVDSS Gate-source voltage VVGSS Continuous ±2.5 AID
Drain current
Pulsed ±10 AIDP Source current Continuous 0.6 AIS
(Body diode) ∗1
Pulsed AISP
Total power dissipation 0.8 WPD Channel temperature °CTch
Range of storage temperature −55 to +150 °CTstg
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Thermal resistance
Rev.A 1/2
Page Summary Contents For ROHM RTF025N03 Data Sheet
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 3 |
| File Size | 83.40 KB |
| Published | June 15, 2026 |
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