ROHM RSU002N06 Data Sheet

Summary

The RSU002N06 is a high-speed N-channel MOSFET ideal for power switching across general electronic equipment, such as audio-visual or communication devices. This comprehensive technical manual details crucial engineering specifications, including absolute maximum ratings, thermal resistance, detailed electrical characteristics (Vds/Vgs), and performance curves. It serves engineers and designers who need reliable components requiring high efficiency and robust operation in demanding switching applications.

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2.5V Drive Nch MOSFET RSU002N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

UMT3 (SC-70) <SOT-323>

Features 1) High speed switing. 2) Small package(UMT3). 3) Low voltage drive(2.5V drive).

Application Switching

Abbreviated symbol : RK

Packaging specifications Inner circuit

Package Taping Type Code T106 Basic ordering unit (pieces)

RSU002N06

(1) (1) SOURCE

(2) GATE

∗1 ESD PROTECTION DIODE

(3) DRAIN

∗2 BODY DIODE

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Limits Unit

Drain-source voltage VDSS Gate-source voltage VGSS 20

Continuous ID 250 m A

Drain current

Pulsed IDP 1 Source current Continuous IS m A

(Body Diode) *1

Pulsed ISP

Power dissipation PD m W Channel temperature Tch C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land.

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient Rth (ch-a) C / W * Each terminal mounted on a recommended land.

www.rohm.com

1/5 2010.04 - Rev.A

Page Summary Contents For ROHM RSU002N06 Data Sheet

Page 1 2.5V Drive Nch MOSFET RSU002N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET UMT3 (SC-70) <SOT-323> Features 1) High speed switing. 2) Small package(UMT3). 3) Low voltage drive(...

Page 2 Data Sheet RSU002N06 Electrical characteristics (Ta = 25C) Symbol Min. Typ. Max. Unit Conditions Parameter Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS I...

Page 3 Data Sheet RSU002N06 IC IN -S -S IC IN -S -S IS (o ] IS (o ] IN [A Electrical characteristic curves Ta= 25C Ta= 25C VDS = 10V VGS= 10V Pulsed Pulsed Pulsed VGS= 4.5V VGS= 4.0V 0.1 VGS= 10V Ta=125...

Page 4 Data Sheet RSU002N06 IT IN Is [A VGS=0V Ta=25C Ta=25C Pulsed td(off) Pulsed VDD= 30V tf VGS=10V 0.1 ID= 0.01A RG=10 Pulsed ID= 0.25A Ta=125C tr Ta=75C td(on) Ta=25C Ta=-25C SOURCE-DRAIN VOLTAG...

Page 5 Data Sheet RSU002N06 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms...

Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	6
File Size	214.33 KB
Published	July 22, 2026

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Frequently Asked Questions

What voltage range is this MOSFET optimized for?

The device features low voltage drive capability, specifically supporting 2.5V operation.

What is the maximum drain-source voltage handled by this component?

It has an absolute maximum rated drain-source voltage (Vds) of 60 V.

Can this MOSFET be used in high-reliability or life-support equipment?

No, it is not intended for systems requiring extremely high reliability, such as medical or aerospace machinery.

What is the typical On-Resistance ($R_{DS(on)}$)?

At 250mA and 4.0V, the typical drain-source on-state resistance ($R_{DS(on)}$) is listed as 3.2 Ohms.