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ROHM RSR020N06 User Guide and Specifications

Summary

This Power MOSFET is a high-efficiency switching component designed for critical DC/DC conversion and power management in consumer electronics. This technical manual provides comprehensive specifications, covering absolute maximum ratings, thermal dissipation curves, and detailed electrical characteristics. It is an essential resource for electronic engineers who are designing equipment ranging from audio-visual devices to office automation systems, ensuring the proper handling and integration of this high-performance semiconductor component.

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RSR020N06 Nch 60V 2A Power MOSFET Datasheet

l Outline

VDSS 60V TSMT3

RDS(on) (Max.) 170m W

ID (1)

PD 1.0W

l Features l Inner circuit 1) Low on - resistance.

(1) Gate

2) Built-in G-S Protection Diode.

(2) Source (3) Drain

3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; Ro HS compliant

*1 ESD PROTECTION DIODE *2 BODY DIODE

l Packaging specifications Packaging Taping Reel size (mm)

l Application

Tape width (mm)

DC/DC converters

Type Basic ordering unit (pcs) 3,000 Taping code TL Marking PZ

l Absolute maximum ratings(Ta = 25°C)

Parameter Symbol Value Unit

Drain - Source voltage VDSS *1

Continuous drain current ID 2

Pulsed drain current ID,pulse 8

Gate - Source voltage VGSS 20 *3

PD 1.0

Power dissipation

PD 0.54

Junction temperature Tj °C Range of storage temperature Tstg -55 to +150 °C

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/11 2012.06 - Rev.B

Page Summary Contents For ROHM RSR020N06 User Guide and Specifications

Page 1 RSR020N06 Nch 60V 2A Power MOSFET Datasheet l Outline VDSS 60V TSMT3 RDS(on) (Max.) 170m W ID (1) PD 1.0W l Features l Inner circuit 1) Low on - resistance. (1) Gate 2) Built-in G-S Protection Diode. ...
Page 2 Data Sheet RSR020N06 l Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient Rth JA °C/W Thermal resistance, junction - ambient Rth JA °C/W l Electri...
Page 3 Data Sheet RSR020N06 l Electrical characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input capacitance Ciss VGS = 0V Coss VDS = 10V p FOutput capacitance Reverse transfe...
Page 4 Data Sheet RSR020N06 rm liz ra ie rm is ta is ip ti /P l Electrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area PW = 100μs PW = 1ms Operation in this...
Page 5 Data Sheet RSR020N06 ra in rr l Electrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) VGS= 10V Ta= 25ºC Ta= 25ºC VGS= 4.5V Pulsed Pulsed VGS...
Page 6 Data Sheet RSR020N06 te re ld lt [V ra in rc re lt l Electrical characteristic curves Fig.7 Breakdown Voltage Fig.8 Typical Transfer Characteristics vs. Junction Temperature VDS=0V VDS = 10V Pulsed ID...
Page 7 Data Sheet RSR020N06 ta ti ra in rc -S ta te is ta ra in rr is ip ti l Electrical characteristic curves Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State Resistance vs. Gate ...
Page 8 Data Sheet RSR020N06 ta ti ra in rc -S ta te is ta ta ti ra in rc -S ta te is ta l Electrical characteristic curves Fig.15 Static Drain - Source On - State Fig.16 Static Drain - Source On - State Resi...
Page 9 Data Sheet RSR020N06 te rc lt l Electrical characteristic curves Fig.18 Typical Capacitance Fig.19 Switching Characteristics vs. Drain - Source Voltage td(off) Ta = 25ºC Ta = 25ºC VDD= 30V f=1MHz VGS=...
Page 10 Data Sheet RSR020N06 l Measurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2...
Page 11 Data Sheet RSR020N06 l Dimensions (Unit : mm) TSMT3 Patterm of terminal position areas e1 MILIMETERS INCHES MIN MAX MIN MAX HE 2.60 3.00 0.102 0.118 L1 0.30 0.60 0.012 0.024 Lp 0.40 0.70 0.016 0.028 M...
Page 12 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...