ROHM RSM002N06 Data Sheet

Summary

Optimize your designs with this robust 2.5V N-channel MOSFET transistor (RSM002N06). Featuring high-speed switching and a compact package, it provides low-voltage drive capability essential for various demanding electronic applications. This manual offers detailed specifications, including electrical characteristics, absolute maximum ratings, and thermal performance curves, enabling engineers to accurately model and implement the component into general electronics equipment such as audio/video or communication devices.

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2.5V Drive Nch MOSFET RSM002N06

Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

Features 1) High speed switing. 2) Small package(VMT3). 3) Low voltage drive(2.5V drive).

Abbreviated symbol : RK

Application Switching

Packaging specifications Inner circuit

Package Taping Type Code T2L Basic ordering unit (pieces)

RSM002N06 ∗2

Absolute maximum ratings (Ta = 25C)

(2) (1) GATE

Parameter Symbol Limits Unit

(2) SOURCE

∗1 ESD PROTECTION DIODE

(3) DRAIN

Drain-source voltage VDSS ∗2 BODY DIODE

Gate-source voltage VGSS 20

Continuous ID 250 m A

Drain current

Pulsed IDP 1 Source current Continuous IS m A

(Body Diode) *1

Pulsed ISP

Power dissipation PD m W

Channel temperature Tch C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land.

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient Rth (ch-a) C / W * Each terminal mounted on a recommended land.

www.rohm.com

1/5 2010.04 - Rev.A

Page Summary Contents For ROHM RSM002N06 Data Sheet

Page 1 2.5V Drive Nch MOSFET RSM002N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) High speed switing. 2) Small package(VMT3). 3) Low voltage drive(2.5V drive). Abbreviated symbo...

Page 2 Data Sheet RSM002N06 Electrical characteristics (Ta = 25C) Symbol Min. Typ. Max. Unit Conditions Parameter Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS I...

Page 3 Data Sheet RSM002N06 IC IN -S -S IC IN -S -S IS (o ] IS (o ] IN [A Electrical characteristic curves Ta= 25C Ta= 25C VDS= 10V VGS= 10V Pulsed Pulsed Pulsed VGS= 4.5V VGS= 4.0V 0.1 VGS= 10V Ta=125...

Page 4 Data Sheet RSM002N06 IT IN Is [A VGS=0V Ta=25C Ta=25C Pulsed td(off) Pulsed VDD= 30V tf VGS=10V 0.1 ID= 0.01A RG=10 Pulsed ID= 0.25A Ta=125C tr Ta=75C td(on) Ta=25C Ta=-25C SOURCE-DRAIN VOLTAG...

Page 5 Data Sheet RSM002N06 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms...

Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	6
File Size	172.03 KB
Published	July 12, 2026

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Frequently Asked Questions

What is the specified drain-source on-state resistance (Rds(on))?

The typical Rds(on) at 250 mA and 4.0V is 3.2 Ohm.

What input voltage is required for low-voltage drive operation?

It features a low voltage drive of 2.5V.

What are the absolute maximum ratings for the drain-source voltage (VDSS)?

The VDSS rating is 60V.

What is the thermal resistance (Rth(c-a))?

The thermal resistance from channel to ambient is specified as 833 °C/W.