ROHM RSJ550N10 User Guide and Manual

Summary

This high-power, N-channel MOSFET features low on-resistance and a dedicated 4V drive, making it ideal for efficient power switching applications in electronics design. This comprehensive manual provides engineers with all necessary technical data, including absolute maximum ratings, detailed electrical specifications, precise switching characteristics (times and curves), and thermal resistance graphs. It is essential documentation for professionals designing robust power conversion systems and industrial control circuits.

📄 Preview ‹ PAGE OF 7 ›

‹

ROHM RSJ550N10 User Guide and Manual - Page 1

›

Page 1 Text Content

Data Sheet

4V Drive Nch MOSFET RSJ550N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS

Features

1) Low on-resistance. 1.24

2) High Power Package.

3) 4V drive. 5.08 2.7

Application Switching

Packaging specifications Inner circuit

Package Taping ∗1

Type Code TL Basic ordering unit (pieces) ∗2

.1 3. 9. RSJ550N10 1.

(1) Gate (2) Drain 1 ESD PROTECTION DIODE (3) Source 2 BODY DIODE

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Limits Unit

Drain-source voltage VDSS Gate-source voltage VGSS 20

Continuous ID *3 55

Drain current

Pulsed IDP *1 110 Source current Continuous IS *3 (Body Diode) Pulsed ISP *1 Power dissipation PD *2

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 PW10s, Duty cycle1% *2 TC=25°C *3 Please use within the range of SOA.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Case Rth (ch-c) 1.25 C / W * TC=25°C

www.rohm.com

Page Summary Contents For ROHM RSJ550N10 User Guide and Manual

Page 1 Data Sheet 4V Drive Nch MOSFET RSJ550N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS Features 1) Low on-resistance. 1.24 2) High Power Package. 3) 4V drive. 5.08 2.7 Application...

Page 2 Data Sheet RSJ550N10 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID...

Page 3 Data Sheet RSJ550N10 Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta ta ti ra in -S rc -S ta te is ta ra in rr Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Outpu...

Page 4 Data Sheet RSJ550N10 it in im rc rr Fig.7 Source Current vs. Source-Drain Voltage Fig.8 Static Drain-Source On-State Resistance vs. Gate-Source Voltage VGS=0V Ta=25°C pulsed pulsed ID=27.5A Ta=125°C T...

Page 5 Data Sheet RSJ550N10 ra in rr Fig.13 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = 10V) PW = 300ms PW = 1ms PW = 10ms PW = 1s 0.1 Ta=25°C Single Pulse Mounted on epox...

Page 6 Data Sheet RSJ550N10 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms ...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.10 MB
Published	June 21, 2026

9 views

Enter the captcha to get the download link: