ROHM RSH070P05 Data Sheet

Summary

The RSH070P05 is a compact 4V-drive P-channel MOSFET designed for power switching in critical applications such as DC/DC converters and inverters. This detailed datasheet equips engineers with complete technical specifications needed for circuit design, covering absolute maximum ratings, precise electrical characteristics (e.g., $R_{DS(on)}$, capacitance), body diode performance, and comprehensive dynamic switching characteristic curves. It serves as a vital resource for integrating reliable power conversion solutions into various electronic equipment.

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4V Drive Pch MOSFET RSH070P05 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET

Features 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8).

Application Power switching, DC / DC converter, Inverter

Each lead has same dimensions

Packaging specifications Inner circuit

Package Taping (8) (7) (6) (5)

Type Code TB

Basic ordering unit (pieces)

RSH070P05

(1) Source Absolute maximum ratings (Ta=25C) (2) Source (3) Source

Parameter Symbol Limits Unit (4) Gate

(5) Drain

Drain-source voltage VDSS -45 (1) (2) (3) (4)

(6 )Drain Gate-source voltage VGSS ±20 (7) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (8) Drain

Continuous ID ±7.0

Drain current

Pulsed IDP *1 ±28 Source current Continuous IS -1.6

(Body diode) Pulsed ISP *1 -28 Total power dissipation PD *2

Chanel temperature Tch

Range of Storage temperature Tstg -55 to +150 *1 PW10ｓ、Duty cycle1 *2 Mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Chanel to ambient Rth(ch-a) * 62.5 * Mounted on a ceramic board

www.rohm.com

1/4 2009.12 - Rev.A

Page Summary Contents For ROHM RSH070P05 Data Sheet

Page 1 4V Drive Pch MOSFET RSH070P05 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET Features 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). Application Power swit...

Page 2 Data Sheet RSH070P05 Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 μA VGS=±20V, VDS=0V Drain-source breakdown voltage V(BR) DSS −45...

Page 3 Data Sheet RSH070P05 ta tic ra in -S rc -S ta te ra in ur rn t : ID pa ci ta ce es is ta nc (o [m Electrical characteristic curves VDS= -10V VGS= -4.5V VGS= -10V Ta=125o C Ta=125o C pulsed pulsed 75o...

Page 4 Data Sheet RSH070P05 Measurement circuits VGS ID VDS 10%VGS trtd(on) trtd(off) ton toff Fig.10 Switching Time Test Circuit Fig.11 Switching Time Waveforms VGS ID IG (Const.) Qgs Qgd Charge Fig.12 Gat...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	204.64 KB
Published	June 22, 2026

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Frequently Asked Questions

What kind of critical systems are prohibited for use with this MOSFET?

It is not designed or recommended for equipment requiring extremely high reliability, such as medical instruments, nuclear-reactor controllers, or transportation machinery.

What minimum on-state resistance can be expected?

The minimal static drain-source on-state resistor ($R_{DS(on)}$) listed in the absolute maximum ratings is -25 mΩ.

How must this component be physically mounted for proper use?

Proper operation and thermal management require it to be mounted on a ceramic board.

What features protect the transistor during operation?

The device includes a built-in G-S Protection Diode, which assists in enhancing overall reliability and preventing failure.