ROHM RSC002P03 Data Sheet

Summary

Discover high performance in power switching with this datasheet for a P-channel MOSFET featuring low on-resistance and advanced 4V drive capability. This comprehensive manual is essential reference material for electrical engineers and circuit designers implementing demanding power applications. It provides exhaustive technical specifications, including absolute maximum ratings, detailed output transfer characteristics across varying temperatures, and accurate measurements of switching times (t(on)/t(off)). Use this resource to optimize and design reliable, efficient switched-mode circuits.

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Data Sheet

4V Drive Pch MOSFET RSC002P03 Structure Dimensions (Unit : mm)

Silicon P-channel MOSFET SST3 <SOT-23>

Features 1) Low on-resistance. 2) Low-voltage drive (4V).

Abbreviated symbol : WP

Application Switching

Packaging specifications Inner circuit

Package Taping (3)

Type Code T316 Basic ordering unit (pieces)

RSC002P03 ∗1

(1) Source (1)(2)

(2) Gate

∗1 BODY DIODE

(3) Drain

∗2 ESD PROTECTION DIODE

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Limits Unit

Drain-source voltage VDSS 30 Gate-source voltage VGSS 20

Continuous ID 0.25

Drain current

Pulsed IDP *1 0.5 Power dissipation PD *2 0.2

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on recommended land-pattern.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Ambient Rth (ch-a) C / W * Mounted on recommended land-pattern.

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Page Summary Contents For ROHM RSC002P03 Data Sheet

Page 1 Data Sheet 4V Drive Pch MOSFET RSC002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET SST3 <SOT-23> Features 1) Low on-resistance. 2) Low-voltage drive (4V). Abbreviated symbol :...

Page 2 Data Sheet RSC002P03 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS 3...

Page 3 Data Sheet RSC002P03 Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta ta ti ra in -S rc -S ta te is ta ra in rr Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Outpu...

Page 4 Data Sheet RSC002P03 rw rd ra fe it ta it in im rc rr Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics VDS=-10V VDS=-10V pulsed pulsed Ta=125°C Ta=75°C Ta=25°...

Page 5 Data Sheet RSC002P03 Measurement circuits Pulse width ID VGS VDS 10% VGS 50% 50% RG VDD trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Notice This...

Page 6 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	6
File Size	1.15 MB
Published	July 10, 2026

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Frequently Asked Questions

What is the maximum drain-source voltage rating for this MOSFET?

The absolute maximum rating for Drain-source voltage (Vds) is -30 V.

How low is the on-state resistance at typical operating current?

At I = -0.15A and V = -4.5V, the static Drain-source on-state resistance (Rds(on)) is listed as 2.1 mΩ.

Does this device have an ESD protection feature?

Yes, the datasheet lists separate components for BODY DIODE and ESD PROTECTION DIODE.

What temperature range can the MOSFET handle in storage?

The range of storage temperature (Tstg) is from -55 to +150 °C.