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ROHM RRH090P03 Data Sheet

Summary

Discover this highly efficient Power MOSFET designed for demanding DC/DC conversion applications in consumer electronics and industrial equipment. Featuring low on-resistance and robust built-in protection diodes in a compact SOP8 package, it maximizes performance while ensuring reliability. This technical datasheet provides comprehensive operational details, including electrical characteristics, transient thermal models, timing diagrams, and maximum safe operating area curves for engineers designing power management circuits.

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RRH090P03 Pch -30V -9A Power MOSFET Datasheet

l Outline

VDSS -30V SOP8

(6) (7) RDS(on) (Max.) 15.4m W (8)

ID (4)

PD 2.0W

l Features l Inner circuit 1) Low on - resistance.

(1) Source (5) Drain 2) Built-in G-S Protection Diode. (2) Source (6) Drain (3) Source (7) Drain 3) Small Surface Mount Package (SOP8). (4) Gate (8) Drain

4) Pb-free lead plating ; Ro HS compliant

*1 ESD PROTECTION DIODE *2 BODY DIODE

l Packaging specifications Packaging Taping Reel size (mm)

l Application

Tape width (mm)

DC/DC Converter

Type Basic ordering unit (pcs) 2,500 Taping code TB Marking RRH090P03

l Absolute maximum ratings(Ta = 25°C)

Parameter Symbol Value Unit

Drain - Source voltage VDSS -30 *1

Continuous drain current ID 9

Pulsed drain current ID,pulse 36

Gate - Source voltage VGSS 20 *3

Avalanche energy, single pulse EAS 0.6 m J

PD 2.0

Power dissipation

PD 0.65

Junction temperature Tj °C Range of storage temperature Tstg -55 to +150 °C

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/11 2012.06 - Rev.C

Page Summary Contents For ROHM RRH090P03 Data Sheet

Page 1 RRH090P03 Pch -30V -9A Power MOSFET Datasheet l Outline VDSS -30V SOP8 (6) (7) RDS(on) (Max.) 15.4m W (8) ID (4) PD 2.0W l Features l Inner circuit 1) Low on - resistance. (1) Source (5) Drain 2) Buil...
Page 2 Data Sheet RRH090P03 l Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - ambient Rth JA 62.5 °C/W Thermal resistance, junction - ambient Rth JA °C/W l El...
Page 3 Data Sheet RRH090P03 l Electrical characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input capacitance Ciss VGS = 0V Coss VDS = -10V p FOutput capacitance Reverse transf...
Page 4 Data Sheet RRH090P03 rm liz ra ie rm is ta is ip ti /P l Electrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area PW = 100μs PW = 1ms PW = 10ms DC Oper...
Page 5 Data Sheet RRH090P03 la rr -I l Electrical characteristic curves ra in rr -I Fig.5 Avalanche Current vs Inductive Load Fig.6 Avalanche Energy Derating Curve vs Junction Temperature 120% Starting Tch=2...
Page 6 Data Sheet RRH090P03 ra in rc re lt te re ld lt [V (B )D l Electrical characteristic curves Fig.9 Breakdown Voltage Fig.10 Typical Transfer Characteristics vs. Junction Temperature VDS = -10V VGS=0V I...
Page 7 Data Sheet RRH090P03 ta ti ra in rc -S ta te is ta ra in rr is ip ti l Electrical characteristic curves Fig.13 Drain Current Derating Curve Fig.14 Static Drain - Source On - State Resistance vs. Gate ...
Page 8 Data Sheet RRH090P03 ta ti ra in rc -S ta te is ta ta ti ra in rc -S ta te is ta l Electrical characteristic curves Fig.17 Static Drain - Source On - State Fig.18 Static Drain - Source On - State Resi...
Page 9 Data Sheet RRH090P03 te rc lt l Electrical characteristic curves Fig.20 Typical Capacitance Fig.21 Switching Characteristics vs. Drain - Source Voltage Ta = 25ºC td(off) VDD= -15V Ciss VGS= -10V RG=10...
Page 10 Data Sheet RRH090P03 l Measurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanch...
Page 11 Data Sheet RRH090P03 l Dimensions (Unit : mm) Patterm of terminal position areas MILIMETERS INCHES MIN MAX MIN MAX HE 5.70 6.30 0.224 0.248 L1 0.50 0.70 0.02 0.028 Lp 0.65 0.85 0.026 0.033 MILIMETERS ...
Page 12 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand ROHM
Pages 12
File Size 803.93 KB
Published June 19, 2026
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Frequently Asked Questions

Is this MOSFET suitable for critical life-support or high reliability systems?

No. It is not designed or warranted for use in equipment requiring extremely high reliability, such as medical instruments or aerospace machinery.

What physical protection features are integrated into the device?

The package includes a built-in G-S Protection Diode, an ESD PROTECTION DIODE, and a BODY DIODE for supplementary safety.

How should I determine the maximum power dissipation?

Power dissipation must be managed using derating curves; consult the datasheet with your specific mounting surface (e.g., ceramic board has $R_{ heta JA}$ of 62.5 °C/W).