ROHM RQ1A060ZP Data Sheet

Summary

This datasheet from ROHM Semiconductor covers the RQ1A060ZP silicon P-channel MOSFET featuring 1.5 V low-voltage gate drive capability in the TSMT8 surface-mount package measuring 3.0 by 2.8 mm. Rated for a drain-source voltage of minus 12 V with continuous drain current of 6 A and pulsed current of 24 A, the device achieves on-resistance values as low as 16 milliohms at 4.5 V gate drive, 22 milliohms at 2.5 V, 28 milliohms at 1.8 V, and 39 milliohms at 1.5 V. The datasheet includes input capaci

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1.5V Drive Pch MOSFET RQ1A060ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET

TSMT8

Features 1) Low on-resistance. 2) High power package. 0.17

(1) (2) (4)(3) 3) Low voltage drive. (1.5V) 0.65 0.32

Abbreviated symbol : YH Each lead has same dimensions

Applications Equivalent circuit Switching

Packaging specifications

Package Taping

Type Code TR

Basic ordering unit (pieces)

(1) Sorce

RQ1A060ZP

∗1 (2) Sorce

(3) Sorce (4) Gate (2) (3)(1) (4) (5) Drain (6) Drain ∗1 ESD PROTECTION DIODE (7) Drain ∗2 BODY DIODE (8) Drain

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Drain-source voltage −12 VVDSS Gate-source voltage ±10 VVGSS Continuous ±6 AID

Drain current

Pulsed ∗1 ±24 AIDP

Source current Continuous −1 AIS

(Body diode) ∗1

Pulsed −24 AISP Total power dissipation ∗2 1.5 WPD

Channel temperature °CTch

Range of Storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient 83.3∗ °C / WRth(ch-a) ∗ Mounted on a ceramic board.

Page Summary Contents For ROHM RQ1A060ZP Data Sheet

Page 1 1.5V Drive Pch MOSFET RQ1A060ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT8 Features 1) Low on-resistance. 2) High power package. 0.17 (1) (2) (4)(3) 3) Low voltage drive. (1.5V) 0...

Page 2 RQ1A060ZP Data Sheet Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS=±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −12 ...

Page 3 RQ1A060ZP Data Sheet ST AT IC AI -S -S TA TE ST AT IC AI -S -S TA TE AI EN : - [A Electrical characteristic curves ES IS TA : R S( )[m ES IS TA : R S( )[m Ta=25°C Ta=25°C VDS= -6V Pulsed Pulsed Pulsed...

Page 4 RQ1A060ZP Data Sheet EV ER SE AI EN : - Is [A Ta=25°C Ta=25°C VDD= -6V AT E- SO VO LT AG : - S [ V] VGS=0V Pulsed VGS=-4.5V RG=10Ω Pulsed td(off) Pulsed Ta=125°C ID= -6.0A Ta=75°C Ta=25°C Ta=-25°C ID=...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	219.92 KB
Published	June 22, 2026

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Frequently Asked Questions

Can this MOSFET be used in life-critical systems?

No, it is not designed for equipment where failure could directly threaten human life or create a risk of injury.

What is the static drain-source on-state resistance (RDS(on))?

The RDS(on) value ranges from -28 to 42 mΩ when rated at ID= −3A and VGS= −1.8V.

What are the maximum voltage ratings for this component?

It has a Drain-source voltage (VDS) limit of −12 V, and a Gate-source voltage (VGSS) of ±10 V.