ROHM RMW280N03 Data Sheet

Summary

Discover the RMW280N03 N-channel MOSFET, an ideal component for high-speed switching applications that require low on-resistance and efficient operation with a 4.5V drive voltage. This comprehensive manual provides detailed engineering data, covering absolute maximum ratings, advanced electrical characteristics, body diode performance, and thermal resistance data. It equips design engineers with the necessary specifications—including dynamic switching curves and DC/pulsed operating limits—to reliably integrate this high-power component into robust power conversion circuits.

📄 Preview ‹ PAGE OF 7 ›

‹

›

Page 1 Text Content

Data Sheet

4.5V Drive Nch MOSFET RMW280N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET PSOP8

Features

1) High Power package(PSOP8).

2) High-speed switching,Low On-resistance. 1pin mark (1) (2) (3) (4)

3) Low voltage drive(4.5V drive). 0.9

Application Switching

Packaging specifications Inner circuit

Package Taping

Type Code TB Basic ordering unit (pieces) RMW280N03 (1) Source

(2) Source ∗2 (3) Source (4) Gate

(5) Drain ∗1

Absolute maximum ratings (Ta = 25C) (6) Drain

(7) Drain

Parameter Symbol Limits Unit (1) (2) (3) (4)

(8) Drain

Drain-source voltage VDSS 5.

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Gate-source voltage VGSS 20

Continuous ID 28

Drain current

Pulsed IDP *1 112

Source current Continuous IS 2.5

(Body Diode) Pulsed ISP *1 Power dissipation PD *2 3.0

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 MOUNTED ON 40mm×40mm Cu BOARD

Thermal resistance

Parameter Symbol Limits Unit

Channel to Ambient Rth (ch-a) 41.7 C / W * MOUNTED ON 40mm×40mm Cu BOARD

www.rohm.com

Page Summary Contents For ROHM RMW280N03 Data Sheet

Page 1 Data Sheet 4.5V Drive Nch MOSFET RMW280N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET PSOP8 Features 1) High Power package(PSOP8). 2) High-speed switching,Low On-resistance. 1pin mar...

Page 2 Data Sheet RMW280N03 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID...

Page 3 Data Sheet RMW280N03 IC IN -S -S IS IN [A Electrical characteristic curves (Ta=25C) IN [A Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Ta=25°C Ta=25°C Pulsed Pulse...

Page 4 Data Sheet RMW280N03 -S IC IN -S -S IT fs [S IS Fig.7 Forward Transfer Admittance Fig.8 Reverse Drain Current vs. Drain Current vs. Sourse-Drain Voltage VDS= 10V VGS=0V Pulsed Pulsed Ta=125°C Ta=125°C...

Page 5 Data Sheet RMW280N03 IN (A Fig.13 Maximum Safe Operating Aera Fig.14 Normalized Transient Thermal Resistance vs. Pulse Width Operation in this area is limited by RDS(ON) (VGS=10V) PW=100us PW=1ms PW =...

Page 6 Data Sheet RMW280N03 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms ...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.09 MB
Published	June 17, 2026

1 views

Enter the captcha to get the download link:

Frequently Asked Questions

What is the drive voltage of the RMW280N03?

It supports low voltage drive at 4.5V.

What is the max continuous drain current?

±28A at Ta=25°C, mounted on 40mm×40mm Cu board.

What ESD precaution is recommended?

Design an ESD protection circuit as it may break down in large electrified environments.