ROHM RMW130N03 Data Sheet

Summary

This N-channel MOSFET is a high-power, low on-resistance component designed for efficient, high-speed power switching in applications requiring reliable 4.5V operation within a compact PSOP8 package. The manual provides comprehensive technical details for designers, covering absolute maximum ratings, dynamic electrical characteristics, thermal performance curves, and precise switching time measurements (rise/fall times). It is essential documentation for engineers designing robust circuits where optimized current handling and minimizing power dissipation are critical requirements.

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Data Sheet

4.5V Drive Nch MOSFET RMW130N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

PSOP8

Features

1) High Power package(PSOP8). 2) High-speed switching,Low On-resistance. 1pin mark

3) Low voltage drive(4.5V drive). 0.9

Application Switching

Packaging specifications Inner circuit

Package Taping

Type Code TB Basic ordering unit (pieces) RMW130N03 (1) Source

(2) Source ∗2 (3) Source (4) Gate

(5) Drain ∗1

Absolute maximum ratings (Ta = 25C) (6) Drain

(7) Drain

Parameter Symbol Limits Unit (1) (2) (3) (4)

(8) Drain

Drain-source voltage VDSS

∗1 ESD PROTECTION DIODE 5.

∗2 BODY DIODE

Gate-source voltage VGSS 20

Continuous ID 13

Drain current

Pulsed IDP *1 52

Source current Continuous IS 2.5

(Body Diode) Pulsed ISP *1 Power dissipation PD *2 3.0

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 MOUNTED ON 40mm×40mm Cu BOARD

Thermal resistance

Parameter Symbol Limits Unit

Channel to Ambient Rth (ch-a) 41.7 C / W * MOUNTED ON 40mm×40mm Cu BOARD

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Page Summary Contents For ROHM RMW130N03 Data Sheet

Page 1 Data Sheet 4.5V Drive Nch MOSFET RMW130N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET PSOP8 Features 1) High Power package(PSOP8). 2) High-speed switching,Low On-resistance. 1pin mar...

Page 2 Data Sheet RMW130N03 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID...

Page 3 Data Sheet RMW130N03 Electrical characteristic curves (Ta=25C) ST AT IC AI -S -S TA TE AI EN : I [A AI EN : I [A ES IS TA : R (o n) [m Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Ch...

Page 4 Data Sheet RMW130N03 AT E- SO VO LT AG : V [V ST AT IC AI -S -S TA TE FO AR AN SF ER IT TA : | Yf s| [S ES IS TA : R (O )[m Fig.7 Forward Transfer Admittance Fig.8 Reverse Drain Current vs. Drain Curr...

Page 5 Data Sheet RMW130N03 AI EN : I A) Fig.13 Maximum Safe Operating Aera Fig.14 Normalized Transient Thermal Resistance vs. Pulse Width Operation in this area is limited by RDS(ON) (VGS=10V) PW=100us PW =...

Page 6 Data Sheet RMW130N03 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% RL VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Wavefor...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	505.36 KB
Published	June 18, 2026

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