ROHM RCJ330N25 Data Sheet

Summary

The RCJ330N25 is a high-performance N-channel MOSFET semiconductor switch designed for critical power electronics applications requiring fast, efficient circuit control. Ideal for designers, this component offers low on-resistance and swift switching speed up to 250V. The accompanying manual provides comprehensive technical data, including absolute maximum ratings, detailed electrical characteristics, thermal analysis, and switching time curves to assist in reliable hardware design and integration.

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Data Sheet

10V Drive Nch MOSFET RCJ330N25 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Fast switching speed. 0.782.54

3) Gate-source voltage (1) (2) (3)

VGSS garanteed to be ±30V . 4) High package power.

Application Inner circuit Switching

Packaging specifications 3. 9.

Package Taping

Type Code TL

(1) Gate (1) (3)(2)

Basic ordering unit (pieces) (2) Drain

(3) Source

RCJ330N25 1 BODY DIODE

Absolute maximum ratings (Ta  25°C)

Parameter Symbol Limits Unit

Drain-source voltage VDSS Gate-source voltage VGSS 30

Continuous ID 33

Drain current

Pulsed IDP *1 132 Source current Continuous IS *3 (Body Diode) Pulsed ISP *1 Avalanche current IAS *2 16.5 Avalanche energy EAS *2 74.8 m J

Power dissipation (Tc=25C) PD Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L≒500H, VDD=50V, Rg=25, starting Tch=25°C *3 Limited only by maximum temperature allowed.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Case Rth(ch-c) 3.12 C / W * TC=25°C

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Page Summary Contents For ROHM RCJ330N25 Data Sheet

Page 1 Data Sheet 10V Drive Nch MOSFET RCJ330N25 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 0.782.54 3) Gate-source voltage (1) (2) (...

Page 2 Data Sheet RCJ330N25 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 100 n A VGS=±30V, VDS=0V Drain-source breakdown voltage V(BR)DSS ...

Page 3 Data Sheet RCJ330N25 Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta [m ra in rr ra in rr Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ)...

Page 4 Data Sheet RCJ330N25 ta ti ra in -S rc -S ta te is ta rw rd ra fe it ta te -S rc lt (o [m fs Fig.8 Source Current vs. Source-Drain Voltage Fig.7 Forward Transfer Admittance vs. Drain Current VDS=10V V...

Page 5 Data Sheet RCJ330N25 ra in rr Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width Fig.13 Maximum Safe Operating Area Operation in this area Ta=25°C is limited by RDS(on) (VGS = 10V) Single...

Page 6 Data Sheet RCJ330N25 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms ...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.21 MB
Published	June 16, 2026

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Frequently Asked Questions

What is the typical on-resistance of this MOSFET?

Static drain-source on-state resistance (R DS(on)) is typically 77 mΩ at I D=16.5A, V GS=10V.

How many units come in a basic order?

The basic ordering unit is 1000 pieces per packaging specifications.

What is the maximum safe gate-source voltage?

Absolute maximum ratings guarantee gate-source voltage (V GSS) tolerance of ±30V.

What thermal resistance should I expect from channel to case?

Thermal resistance from channel to case (Rth(ch-c)) is 3.12°C/W at Tc=25°C.

How fast is the rise time during switching?

Typical switching rise time (t r) is ≤200 ns at V GS=10V per electrical characteristics.