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ROHM RB731XN Data Sheet

Summary

Discover the highly reliable RB731XN Schottky barrier diode, optimized for low forward voltage performance in small power mold packages (UMD6/SOT-363). This comprehensive technical document provides engineers with essential specifications, including full electrical characteristic curves, thermal impedance data, surge ratings, and derating guidelines. It is the ideal component solution for designing high-efficiency circuitry in consumer electronics, industrial equipment, and general communication devices.

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Page 1 Text Content

查询RB731XN供应商

RB731XN

Diodes

Schottky barrier diode RB731XN

Applications External dimensions (Unit : mm) Land size figure

General rectification

2.0±0.2 0.650.65 0.25±0.1 各リードとも 0.15±0.05 0.05 Each lead has same dimension 同寸法

Features

1) Small power mold type. (UMD6) 2) Low VF

3) High reliability (1) (3)(2)

0.65 0.65 UMD6

Structure

ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory)

Taping dimensions (Unit : mm)

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Average rectified forward current IO m A Forward current surge peak (60Hz 1cyc.) IFSM m A Junction temperature Tj °C Storage temperature Tstg −40 to +125 °C ∗ Rating for each diode Io/3

Electrical characteristic (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Forward voltage VF 0.37 IF=1m A

Reverse current IR µA VR=10V

Ct 2Capacitance between terminal p F VR=1V, f=1MHz

Rev.B 1/3

Page Summary Contents For ROHM RB731XN Data Sheet

Page 1 查询RB731XN供应商 RB731XN Diodes Schottky barrier diode RB731XN Applications External dimensions (Unit : mm) Land size figure General rectification 2.0±0.2 0.650.65 0.25±0.1 各リードとも 0.15±0.05 0.05 Each lead...
Page 2 RB731XN IE :V (m Diodes :IF (A :IF (m :R th Electrical characteristic curves f=1MHz Ta=125℃ Ta=125℃ Ta=75℃ Ta=75℃ Ta=-25℃ Ta=25℃ Ta=25℃ 0.1 0.1 Ta=-25℃ 0.1 :IR (u IS IP IO :P f( :IR (n :IF (A FORWARD ...
Page 3 RB731XN IF IE :Io Diodes Per chip Io Per chip Io 0V VR 0V VR D=t/T D=t/T 0.06 DC VR=15V 0.06 VR=15V Tj=125℃ Tj=125℃ 0.02 Sin(θ=180) Sin(θ=180) IF IE :Io (A AMBIENT TEMPERATURE:Ta(℃) CASE TEMPARATURE:T...
Page 4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...
Page 5 WWW.ALLDATASHEET.COM Copyright © Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from : www.All Data Sheet.com 100% Free Data Sheet S...

Manual Details

Brand ROHM
Pages 5
File Size 170.75 KB
Published June 15, 2026
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Frequently Asked Questions

What is the maximum repetitive peak reverse voltage ($V_{RM}$) for this diode?

The absolute maximum rating for the repetitive peak reverse voltage ($V_{RM}$) is 40 V.

In what packages (ROHM, JEDEC, JEITA) is the RB731XN available?

It is available in UMD6 (ROHM), SOT-363 (JEDEC), and SC-88 (JEITA) package types.

Is this device suitable for mission-critical life support equipment?

No, if the malfunction could directly endanger human life (e.g., medical or aerospace), consult a sales representative first.

What is the typical forward voltage ($V_F$) of the Schottky diode?

The electrical characteristic shows that the typical forward voltage $V_F$ is 0.37 V when the forward current ($I_F$) is 1mA.