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ROHM R6012FNX Data Sheet

Summary

The R6012FNX is a high-performance N-channel MOSFET designed for robust switching applications in power electronic circuits. This essential manual provides comprehensive technical specifications, including absolute maximum ratings, detailed electrical characteristics, thermal analysis data, and detailed measurement circuit diagrams. It is an indispensable resource for power electronics engineers and designers utilizing the component for reliable operation in motor control, switching power supplies, and other high-efficiency applications requiring fast switching speed and low on-resistance.

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Data Sheet

10V Drive Nch MOSFET R6012FNX Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET TO-220FM

Features

1) Fast reverse recovery time (trr) 1.2

2) Low on-resistance.

3) Fast switching speed. 0.8 2.54 0.75 2.62.54

4) Gate-source voltage

  VGSS garanteed to be ±30V . 5) Drive circuits can be simple. 6) Parallel use is easy.

Application Switching Inner circuit

Packaging specifications

Package Bulk .0 2. 8.

Type Code

Basic ordering unit (pieces)

R6012FNX (1) Gate (2) Drain

1 BODY DIODE

(3) Source

Absolute maximum ratings (Ta  25°C)

Parameter Symbol Limits Unit

Drain-source voltage VDSS Gate-source voltage VGSS 30

Continuous ID 12

Drain current

Pulsed IDP *1 48 Source current Continuous IS *3 (Body Diode) Pulsed ISP *1 Avalanche Current IAS *2 Avalanche Energy EAS *2 9.6 m J

Power dissipation (Tc=25C) PD Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L≒500H, VDD=50V, Rg=25,starting Tch=25°C *3 Limited only by maximum temperature allowed.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Case Rth (ch-c) 2.5 C / W

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© 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A

Page Summary Contents For ROHM R6012FNX Data Sheet

Page 1 Data Sheet 10V Drive Nch MOSFET R6012FNX Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TO-220FM Features 1) Fast reverse recovery time (trr) 1.2 2) Low on-resistance. 3) Fast switching ...
Page 2 Data Sheet R6012FNX Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 100 n A VGS=±30V, VDS=0V Drain-source breakdown voltage V(BR)DSS I...
Page 3 Data Sheet R6012FNX Electrical characteristic curves (Ta=25C) St at ic ra in -S ou rc n- St at es is ta nc ra in ur rn t : [A ra in ur re nt [A Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical...
Page 4 Data Sheet R6012FNX Fo rw ar Tr an sf er dm itt an ce at e- So ur ce ol ta ge [V St at ic ra in -S ou rc n- St at es is ta nc Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Source Current v...
Page 5 Data Sheet R6012FNX or al iz ed ra ns ie nt he rm al es is ta nc r( t) ev er se ec ov er Ti : t rr [n s] Fig.13 Reverse Recovery Time vs. Source Current Fig.14 Maximum Safe Operating Area Operation in...
Page 6 Data Sheet R6012FNX Measurement circuits Pulse width VGS ID VDS 90% 50% 50% RL VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveform...
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