ROHM R6012FNX Data Sheet
Summary
The R6012FNX is a high-performance N-channel MOSFET designed for robust switching applications in power electronic circuits. This essential manual provides comprehensive technical specifications, including absolute maximum ratings, detailed electrical characteristics, thermal analysis data, and detailed measurement circuit diagrams. It is an indispensable resource for power electronics engineers and designers utilizing the component for reliable operation in motor control, switching power supplies, and other high-efficiency applications requiring fast switching speed and low on-resistance.
Page 1 Text Content
Data Sheet
10V Drive Nch MOSFET R6012FNX Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET TO-220FM
Features
1) Fast reverse recovery time (trr) 1.2
2) Low on-resistance.
3) Fast switching speed. 0.8 2.54 0.75 2.62.54
4) Gate-source voltage
VGSS garanteed to be ±30V . 5) Drive circuits can be simple. 6) Parallel use is easy.
Application Switching Inner circuit
Packaging specifications
Package Bulk .0 2. 8.
Type Code
Basic ordering unit (pieces)
R6012FNX (1) Gate (2) Drain
1 BODY DIODE
(3) Source
Absolute maximum ratings (Ta 25°C)
Parameter Symbol Limits Unit
Drain-source voltage VDSS Gate-source voltage VGSS 30
Continuous ID 12
Drain current
Pulsed IDP *1 48 Source current Continuous IS *3 (Body Diode) Pulsed ISP *1 Avalanche Current IAS *2 Avalanche Energy EAS *2 9.6 m J
Power dissipation (Tc=25C) PD Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L≒500H, VDD=50V, Rg=25,starting Tch=25°C *3 Limited only by maximum temperature allowed.
Thermal resistance
Parameter Symbol Limits Unit
Channel to Case Rth (ch-c) 2.5 C / W
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© 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A
Page Summary Contents For ROHM R6012FNX Data Sheet
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 7 |
| File Size | 607.65 KB |
| Published | June 19, 2026 |
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