ROHM R6004CND Data Sheet

Data Sheet

10V Drive Nch MOSFET R6004CND Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3

(SC-63)

<SOT-428> 2.3 0.5

Features 1) Low on-resistance. 2) High-speed switching.

3) Wide SOA.

(1) Gate 0.65

4) Drive circuits can be simple. (2) Drain (1) (3) 2.3(2) 0.5

(3) Source 1.0

5) Parallel use is easy.

Application Switching

Packaging specifications Inner circuit

Package Taping ∗1

Type Code TL Basic ordering unit (pieces)

R6004CND

(1) Gate (1) (2) (3)

(2) Drain

1 ESD PROTECTION DIODE

(3) Source

Absolute maximum ratings (Ta = 25C) 2 BODY DIODE

0. 8M in

Parameter Symbol Limits Unit 1.

Drain-source voltage VDSS Gate-source voltage VGSS 25

Continuous ID *3 4

Drain current

Pulsed IDP *1 16

Source current Continuous IS

(Body Diode) Pulsed ISP *1 Avalanche current IAS *2 *2

Avalanche energy EAS 1.1 m J

Power dissipation PD Channel temperature Tch C

Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 L 500H, VDD=50V, RG=25, Tch=25C

*3 Limited only by maximum temperature allowed.

*4 TC=25C

Thermal resistance

Parameter Symbol Limits Unit

Channel to Case Rth (ch-c) 3.13 C / W

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