ROHM QST2 User Guide and Manual

Transistors

General purpose amplification (−12V, −3A) QST2

Application External dimensions (Unit : mm)

Low frequency amplifier Driver

Features 1) Collector current is large. 2) Collector saturation voltage is low. VCE(sat) −250m V at IC = −3A / IB = −60m A

ROHM : TSMT6 Each lead has same dimensions

Abbreviated symbol : T02

Absolute maximum ratings (Ta=25°C) Equivalent circuit

Parameter Symbol Limits Unit

Collector-base voltage VCBO −15

6pin 5pin 4pin 2.

Collector-emitter voltage VCEO −12 Emitter-base voltage VEBO −6

IC −6

Collector current

ICP −10 ∗1 m W ∗2

Power dissipation PC

1.25 ∗3 Junction temperature Tj °C

1pin 2pin 3pin

Range of storage temperature Tstg −55 to +150 °C

∗1 Single pulse, Pw=1ms ∗2 Each Terminal Mounted on a Recommended ∗3 Mounted on a 25mm×25mm× 0.8mm Ceramic substratet

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO −15 IC= −10µA

Collector-emitter breakdown voltage BVCEO −12 IC= −1m A

BVEBO −6 IE= −10µAEmitter-base breakdown voltage

ICBO −100 n A VCB= −15VCollector cutoff current

IEBO −100 n A VEB= −6VEmitter cutoff current

VCE(sat) −120 −250 m V IC= −3A, IB= −60m ACollector-emitter saturation voltage

h FE VCE= −2V, IC= −500m ADC current gain

Transition frequency f T MHz VCE= −2V, IE=500m A, f=100MHz Cob p FCorrector output capacitance VCB= −10V, IE=0A, f=1MHz

∗Pulsed

Rev.B 1/2