ROHM QS8J12 User Guide and Manual

Summary

Optimize your power switching applications with this compact MOSFET solution. Featuring low On-resistance and designed for highly efficient operation, the QS8J12 delivers dependable performance in small packages while maintaining compatibility with low voltage drive systems. This comprehensive technical manual is essential reference material for engineers, detailing robust absolute maximum ratings, detailed electrical characteristics (including $R_{DS(on)}$, capacitances), thermal profiles, and specialized measurement circuits needed to accurately characterize switching times and total gate charge.

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ROHM QS8J12 User Guide and Manual - Page 1

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Page 1 Text Content

Data Sheet

1.5V Drive Pch + Pch MOSFET QS8J12 Structure Dimensions (Unit : mm)

Silicon P-channel MOSFET TSMT8

Features 1) Low On-resistance.

2) Small high power package. (1) (2) (4)(3)

3) Low voltage drive(1.5V drive).

Abbreviated symbol : J12

Application Switching

Packaging specifications Inner circuit

Package Taping

Type Code TCR Basic ordering unit (pieces) QS8J12

(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source

Absolute maximum ratings (Ta = 25C) (4) Tr2 Gate (5) Tr2 Drain

Parameter Symbol Limits Unit (6) Tr2 Drain (1) (2) (3) (4)

(7) Tr1 Drain

Drain-source voltage VDSS 12 ∗1 ESD PROTECTION DIODE

(8) Tr1 Drain

∗2 BODY DIODE

Gate-source voltage VGSS 0 to 8 Continuous ID 4.5

Drain current

Pulsed IDP *1 18 Source current Continuous Is 1 (Body Diode) Pulsed Isp *1 18 1.5 W / TOTAL PDPower dissipation *2 1.25 W / ELEMENT

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

Thermal resistance

Parameter Symbol Limits Unit

83.3 ˚C / W /TOTAL

Channel to Ambient Rth (ch-a)

˚C / W /ELEMENT

* Mounted on a ceramic board.

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Page Summary Contents For ROHM QS8J12 User Guide and Manual

Page 1 Data Sheet 1.5V Drive Pch + Pch MOSFET QS8J12 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT8 Features 1) Low On-resistance. 2) Small high power package. (1) (2) (4)(3) 3) Low volta...

Page 2 Data Sheet QS8J12 Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=8V, VDS=0...

Page 3 Data Sheet QS8J12 Electrical characteristic curves (Ta=25C) IC IN -S -S IN [A IN [A Fig.1 Typical output characteristics(Ⅰ) Fig.2 Typical output characteristics(Ⅱ) Ta=25°C Ta=25°C VGS= -4.5V Pulsed ...

Page 4 Data Sheet QS8J12 IT fs IC IN -S -S IC IN -S -S IS IS Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) VGS= -1.8V V...

Page 5 Data Sheet QS8J12 Fig.13 Dynamic Input Characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage Ta=25°C VDD= -6V ID= -4.5A Ta=25°C RG=10W f=1MHz Pulsed VGS=0V DRAIN-SOURCE VOLTAGE : -VDS[V]...

Page 6 Data Sheet QS8J12 Measurement circuits Pulse Width VGS ID VGS VDS 10% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms VDS Qg IG(Const.) D.U.T. Qgs Q...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.16 MB
Published	June 15, 2026

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