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ROHM QS5Y2 User Guide and Manual

Summary

This data sheet details the QS5Y2, a medium power NPN/PNP silicon epitaxial planar transistor designed for robust amplification and driver applications. The manual provides expert specifications, covering key parameters like high-speed switching, low saturation voltage, electrical characteristics across temperatures, and absolute maximum ratings up to ±3A. It is an essential component for engineers designing general electronic equipment, including audio visual systems and industrial automation devices.

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Midium Power Transistors (±50V / ±3A) QS5Y2 Structure Dimensions (Unit : mm) NPN/PNP Silicon epitaxial planar transistor

TSMT5

Features 1) Low saturation voltage, typically VCE (sat) = -0.40V (Max.) (IC / IB= -1A / -50m A) VCE (sat) = 0.35V (Max.) (IC / IB= 1A / 50m A)

(1) Base 2) High speed switching (2) Collector (3) Emitter

Abbreviated symbol : Y02

Applications Low Frequency Amplifier Driver

Packaging specifications Inner circuit (Unit : mm)

Package TSMT5

Type Code TR Basic ordering unit (pieces)

Tr.1 Tr.2

(1) Tr.1 Base (2) Emitter

Absolute maximum ratings (Ta = 25C) (3) Tr.2 Base

(4) Tr.2 Collector (1) (2) (3)

　<Tr.1>

(5) Tr.1 Collector

Parameter Symbol Limits Unit

Collector-base voltage VCBO -50 Collector-emitter voltage VCEO -50 Emitter-base voltage VEBO -6

DC IC -3

Collector current

Pulsed ICP *1 -6

　<Tr.2>

Parameter Symbol Limits Unit

Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO

DC IC

Collector current

Pulsed ICP *1

　<Tr.1 and Tr.2>

Parameter Symbol Limits Unit

PD *2 0.5 W/Total Power dissipation PD *3 1.25 W/Total PD *3 0.9 W/Element

Junction temperature Tj C Range of storage temperature Tstg -55 to 150 C *1 Pw=10ms, Single Pulse *2 Mounted on a recommended land. *3 Mounted on a 25 x 25 x 0.8[mm] ceramic board.

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©2010 ROHM Co., Ltd. All rights reserved. 1/7 2010.11 - Rev.A

Page Summary Contents For ROHM QS5Y2 User Guide and Manual

Page 1 Midium Power Transistors (±50V / ±3A) QS5Y2 Structure Dimensions (Unit : mm) NPN/PNP Silicon epitaxial planar transistor TSMT5 Features 1) Low saturation voltage, typically VCE (sat) = -0.40V (Max.)...
Page 2 QS5Y2 Data Sheet Electrical characteristics (Ta=25°C) 　&lt;Tr.1&gt; Symbol Min. Typ. Max. Unit Conditions Parameter Collector-emitter breakdown voltage BVCEO -50 IC= -1m A Collector-base breakdown vo...
Page 3 QS5Y2 Data Sheet Electrical characteristic curves (Ta = 25C) IO (s t) [V IN [A 〈Tr.1〉 Fig.1 Typical Output Characteristics Fig.2 DC Current Gain vs. Collector Current ( I ) -2.5m A Ta=25°C VCE= -5V ...
Page 4 QS5Y2 Data Sheet [A IT IO [M Fig.8 Emitter Input Capacitance vs. Emitter-Base Voltage Fig.7 Gain Bandwidth Product vs. Emitter Current Collector Output Capacitance vs. Collector-Base Voltage Ta=25°C V...
Page 5 QS5Y2 Data Sheet IO (s t) [V IN [A 〈Tr.2〉 3.0m A Fig.1 Typical Output Characteristics Fig.2 DC Current Gain vs. Collector Current ( I ) Ta=25°C VCE=5V IB=0.5m A Ta=25°C COLLECTOR CURRENT : IC[m A] COL...
Page 6 QS5Y2 Data Sheet IT IO [M Fig.8 Emitter Input Capacitance vs. Emitter-Base Voltage Fig.7 Gain Bandwidth Product vs. Emitter Current Collector Output Capacitance vs. Collector-Base Voltage Ta=25°C Ta=2...
Page 7 QS5Y2 Data Sheet Switching time test circuit RL=8.2Ω 　&lt;Tr.1&gt; VIN IB1 VCC -12V Pw 50μs DUTY CYCLE≦1% BASE CURRENT WAVEFORM tstgton tf COLLECTOR CURRENT WAVEFORM 　&lt;Tr.2&gt; RL=8.2Ω VCC 12V~_ P...
Page 8 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand ROHM
Pages 8
File Size 491.29 KB
Published July 10, 2026
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