ROHM QS5U36 User Guide and Manual

Summary

The QS5U36 is a high-performance, integrated N-channel MOSFET combining low on-resistance switching capabilities with an embedded Schottky barrier diode for enhanced ESD protection. This comprehensive manual provides essential technical documentation, including absolute maximum ratings, detailed electrical characteristics, and dynamic performance curves. It is designed for engineers needing reliable components for complex switching applications in consumer and industrial electronics.

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Page 1 Text Content

QS5U36

Transistors

1.5V Drive Nch+SBD MOSFET QS5U36

Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET

TSMT5

Schottky Barrier DIODE

Features 1) The QS5U36 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive (1.5V).

Each lead has same dimensions

4) The Independently connected Schottky barrier diode Abbreviated symbol : U36 has low forward voltage.

Applications Switching

Equivalent circuit

Packaging specifications

Package Taping

Type Code TR

Basic ordering unit (pieces)

QS5U36

∗1 (1)Gate

(2)Source (1) (2) (3) (3)Anode ∗1 ESD protection diode (4)Cathode ∗2 Body diode (5)Drain

Page Summary Contents For ROHM QS5U36 User Guide and Manual

Page 1 QS5U36 Transistors 1.5V Drive Nch+SBD MOSFET QS5U36 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT5 Schottky Barrier DIODE Features 1) The QS5U36 combines Nch MOSFET with a Schottky ba...

Page 2 QS5U36 Transistors Absolute maximum ratings (Ta=25°C) <MOSFET> Parameter Symbol Limits Unit Drain-source voltage VVDSS Gate-source voltage ±10 VVGSS Continuous ±2.5 AID Drain current Pulsed ±5.0...

Page 3 IC IN -S IN ID QS5U36 IT p F -S IS on ) ( Transistors Electrical characteristic curves <MOSFET> Ta=25°C Ta=25°C Ta=25°C f=1MHz VDD=10V VDD=10V VGS=0V VGS=4.5V ID=2.5A RG=10Ω RG=10Ω Pulsedtf Puls...

Page 4 EV ER SE EN : I [u A] QS5U36 Transistors IC IN -S -S IS on ) ( VGS=2.5V VGS=4.5V VDS=10V Pulsed Pulsed Pulsed Ta=125°C Ta=75°C Ta=125°C Ta=25°C Ta=75°C Ta=−25°C Ta=25°C Ta=−25°C Ta=−25°C Ta=25°C Ta=75...

Page 5 QS5U36 Transistors Measurement circuit Pulse Width VGS ID VDS 90% VGS 10% 90% 90% trtd(on) tftd(off) ton toff Fig.15 Switching Time Measurement Circuit Fig.16 Switching Waveforms VGS ID IG(Const.) Qgs...

Page 6 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand	ROHM
Pages	6
File Size	134.38 KB
Published	July 07, 2026

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Frequently Asked Questions

What is the benefit of combining Nch MOSFET and Schottky diode?

The QS5U36 combines them in a single package, offering low on-state resistance with fast switching and an independently connected Schottky barrier diode.

What are the absolute maximum ratings for drain current and power dissipation?

The continuous Drain Current (ID) is ±2.5 A, and the total Power Dissipation PD is 1.25 W.

Is this component suitable for life-critical applications?

No, you must consult a sales representative if using it in equipment where malfunction could directly endanger human life.

What is the nominal gate threshold voltage (VGS(th))?

The typical Gate threshold voltage VGS(th) is 0.81 V.