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ROHM EMX18 UMX18N Data Sheet

Summary

The EMX18/UMX18N are general-purpose dual NPN transistors designed for reliable signal amplification in various electronics. This comprehensive manual details full specifications, including absolute ratings, electrical performance curves, and stability data across wide temperature ranges (-40°C to 125°C). Ideal for audio visual equipment, office automation hardware, and standard consumer devices, these components save space and cost by integrating two independent transistors into a single package.

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EMX18 / UMX18N

Transistors

General purpose transistors (dual transistors) EMX18 / UMX18N

Features External dimensions (Unit : mm)

1) Two 2SC5585 chips in a EMT or UMT package.

EMX18

2) Mounting possible with EMT3 or UMT3 automatic

mounting machines.

(2)(5) (6) (1) 3) Transistor elements are independent, eliminating 1.2 1.6

interference. 4) Mounting cost and area can be cut in half.

Each lead has same dimensions

ROHM : EMT6

Abbreviated symbol : X18

Structure Epitaxial planar type

UMX18N

NPN silicon transistor

The following characteristics apply to both Tr1 and Tr2.

0.1Min. 0. 0. 0. 1.

Each lead has same dimensions0~ 0. 90. 1.

Equivalent circuit 2.

ROHM : UMT6 EIAJ : SC-88

EMX18 / UMX18N Abbreviated symbol : X18 (3) (2) (1)

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Collector-base voltage VCBO

Collector-emitter voltage VCEO

Emitter-base voltage VEBO

IC m A500

Collector current

ICP A1.0 Power dissipation Pd 150 (TOTAL) m W ∗1

Junction temperature Tj ˚C Storage temperature Tstg −55 to +150 ˚C

∗1 120m W per element must not be exceeded.

Rev.A 1/3

Page Summary Contents For ROHM EMX18 UMX18N Data Sheet

Page 1 EMX18 / UMX18N Transistors General purpose transistors (dual transistors) EMX18 / UMX18N Features External dimensions (Unit : mm) 1) Two 2SC5585 chips in a EMT or UMT package. EMX18 2) Mounting possib...
Page 2 LL IC EMX18 / UMX18N Transistors Electrical characteristics (Ta=25°C) 5° Parameter Symbol Min. Typ. Max. Unit °C Conditions -4 0° Collector-base breakdown voltage BVCBO IC=10µA Collector-emitter break...
Page 3 IT TE IN EMX18 / UMX18N IT ib (p F) LL TO TU TI LT (s at ) ( LL TO TP IT ob (p F) Transistors Ta = 25°C IC/IB = 20 VCE = 2V Ta = -40°C Ta = 25°C 25°C Pulsed 125°C IC/IB = 50 LL TO TU TI LT (s at ) ( C...
Page 4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand ROHM
Pages 4
File Size 70.28 KB
Published June 02, 2026
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Frequently Asked Questions

Can these transistors be used in high-reliability or life-safety applications?

No, for equipment requiring extremely high reliability, consult a sales representative in advance.

What benefit does using dual transistors like the EMX18 provide?

The elements are independent, eliminating interference and cutting mounting cost/area in half.

What is the maximum power dissipation allowed per element?

When considering junction temperature (Tj), 120 mW per element must not be exceeded.

How can these transistors be physically mounted?

Mounting is possible using EMT3 or UMT3 automatic mounting machines.