ROHM EMG9 Data Sheet

EMG9 / UMG9N / FMG9A

Datasheet

NPN 100m A 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

l Outline Parameter Tr1 and Tr2 EMT5 UMT5

(2) VCC 50V (4) (1)

IC(MAX.) (2)

EMG9 UMG9N

R2 10k W (SC-107BB) SOT-353 (SC-88A)

l Features

1) Built-In Biasing Resistors, R1 = R2 = 10k W. (5)

(4) 2) Two DTC114E chips in one package. (3)

3) Emitter(GND)-common type.

FMG9A 4) Built-in bias resistors enable the configuration of (SC-74A)

an inverter circuit without connecting external input resistors (see inner circuit).

5) The bias resistors consist of thin-film resistors l Inner circuit

with complete isolation to allow negative biasing

EMG9 / UMG9N FMG9A

of the input. They also have the advantage of

IN GND IN IN GND IN (3) (2) (1) (3) (4) (5)

completely eliminating parasitic effects. 6) Only the on/off conditions need to be set for operation, making the circuit design easy. 7) Lead Free/Ro HS Compliant.

(4) (5) (2) (1) l Application OUT OUT OUT OUT

Inverter circuit, Interface circuit, Driver circuit

l Packaging specifications

Package Basic

Taping Tape width

Part No. Package size ordering Marking Reel size

code (mm) (mm)

(mm) unit (pcs)

EMG9 EMT5 T2R 8,000 G98 UMG9N UMT5 TR 3,000 G9 FMG9A SMT5 T148 3,000 G9

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