ROHM EMF9 Data Sheet
Summary
The EMF9 transistor package provides an integrated power switching solution by combining two transistors—a bipolar junction transistor (Tr1) and a MOSFET (Tr2)—into a single, space-saving EMT6 housing. This design significantly reduces mounting area and assembly costs for complex power management circuits. The manual details comprehensive electrical specifications, including absolute maximum ratings, saturation voltages, transfer admittances, and performance curves essential for system designers implementing reliable, high-efficiency power control in their electronic devices.
Page 1 Text Content
Transistors
Power management (dual transistors) EMF9 2SC5585 and 2SK3019 are housed independently in a EMT6 package.
Application
Dimensions (Units : mm)
Power management circuit
Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half. 1.6
Structure ROHM : EMT6 Each lead has
same dimensions
Silicon epitaxial planar transistor
Abbreviated symbol : F9
Equivalent circuits
Packaging specifications
Type EMF9 Package EMT6
Marking F9 Code T2R
Basic ordering unit (pieces)
Rev.A 1/5
Page Summary Contents For ROHM EMF9 Data Sheet
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 6 |
| File Size | 93.77 KB |
| Published | June 16, 2026 |
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Frequently Asked Questions
How does this transistor package help save space?
Mounting cost and area can be cut in half with two transistors in one EMT6 package.
What applications are NOT suitable for EMF9 transistors?
Not for medical instruments, transportation, aerospace, nuclear-reactor controllers, or other safety-critical devices.
What is the absolute maximum collector-base voltage for Tr1?
Maximum collector-base voltage (VCBO) for Tr1 is 15V at 25°C.