ROHM EMD12 UMD12N Data Sheet

Summary

These dual digital transistors are specialized components designed for efficient power management applications in electronic circuits. This manual provides comprehensive technical specifications necessary for reliable circuit design, covering crucial data such as electrical operating parameters, absolute maximum ratings, thermal performance curves (ON and OFF characteristics), and physical packaging details. It is essential reading for engineers and designers integrating high-performance switching transistors into their custom electronic hardware.

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Page 1 Text Content

EMD12 / UMD12N

Transistors

Power management (dual digital transistors) EMD12 / UMD12N Features

EMD12

1) Both the DTA144E and DTC144E in a EMT or UMT

package.

Equivalent circuit

Each lead has same dimensions ROHM : EMT6

DTr2 UMD12N

Package, marking, and packaging specifications

0.1Min.

Type EMD12 UMD12N 0. 0. 0. 0. 1.

Each lead has same dimensions ROHM : UMT6 0. 0.

Package EMT6 UMT6

EIAJ : SC-88

Marking D12 D12 0. 90. 1. Code T2R TR 2.

Basic ordering unit (pieces)

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Supply voltage VCC

Input voltage VIN

IC m A

Output current

IO m A

Power dissipation Pd 150(TOTAL) m W ∗1

Junction temperature Tj °C Storage temperature Tstg −55~+150 °C

∗1 120m W per element must not be exceeded. PNP type negative symbols have been omitted

External dimensions (Units : mm)

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

VI (off) 0.5 VCC=5/−5V, IO=100/−100µA

Input voltage

VI (on) VO=0.3/−0.3V, IO=2/−2m A

Output voltage VO (on) 0.1 0.3 IO=10/−10m A, II=0.5/−0.5m A

Input current II 0.18 m A VI=5/−5V

Output current IO (off) 0.5 µA VCC=50/−50V, VI=0V DC current gain GI IO=5/−5m A, VO=5/−5V

Transition frequency f T MHz VCE=10/−10V, IE=−5/5m A, f=100MHz

Input resistance R1 32.9 61.1 kΩ Resistance ratio R2 / R1 0.8 1.2 ∗Transition frequency of the device. PNP type negative symbols have been omitted

Rev.A 1/3

Page Summary Contents For ROHM EMD12 UMD12N Data Sheet

Page 1 EMD12 / UMD12N Transistors Power management (dual digital transistors) EMD12 / UMD12N Features EMD12 1) Both the DTA144E and DTC144E in a EMT or UMT package. Equivalent circuit Each lead has same dime...

Page 2 EMD12 / UMD12N LT (o n) IN LT I( on ) ( Transistors Electrical characteristics curves DTr1 (DTC144E) VO=0.3V VCC=5V VO=5V 5m 2m Ta=100°C Ta=100°C Ta=−40°C 25°C OUTPUT CURRENT : IO (A) INPUT VOLTAGE : ...

Page 3 EMD12 / UMD12N LT (o n) IN LT I( on ) ( Transistors Electrical characteristics curves DTr2 (DTA144E) VO=0.3V VCC=5V VO=5V 5m 2m Ta=100°C Ta=100°C Ta=−40°C 25°C OUTPUT CURRENT : IO (A) INPUT VOLTAGE : ...

Page 4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand	ROHM
Pages	4
File Size	71.02 KB
Published	July 10, 2026

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Frequently Asked Questions

What is the maximum allowable power dissipation for these transistors?

The total package limit ($P_d$) is 150 mW; however, each individual element must not exceed 120 mW.

Are these suitable for life-support or critical safety equipment?

Consulting a sales representative is mandatory if using this product in devices that could directly endanger human life (e.g., medical instruments).

What are the recognized physical package options and markings?

They are available in EMT6 or UMT6 packages, with standard markings such as D12 and T2R.