ROHM EM6K7 Data Manual

Summary

Achieve highly efficient switching in portable electronics with this low-voltage Nch+Nch MOSFET. Designed with independent elements and compact packaging, this device minimizes interference while offering a 1.2V drive ideal for space-constrained equipment. This comprehensive manual provides electrical characteristics, thermal ratings, and deep performance data necessary for engineers designing general-use consumer appliances like visual displays, communication devices, and office automation systems.

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1.2V Drive Nch+Nch MOSFET EM6K7 Structure Dimensions (Unit : mm) Silicon N-channel

MOSFET

Applications Switching

Features 1) The MOSFET elements are independent, Each lead has same dimensions eliminating mutual interference.

Abbreviated symbol : K07

2) Mounting cost and area can be cut in half. 3) Low voltage drive (1.2V) makes this device ideal for portable equipment.

Inner circuit

Packaging specifications ∗1

Package Taping

Code T2R

Basic ordering unit

(pieces) ∗2∗2

EM6K7

(1)Tr1 Source (2)Tr1 Gate (3)Tr2 Drain

(4)Tr2 Source (1) (2) (3) (5)Tr2 Gate (6)Tr1 Drain

∗1 Esd Protection diode

Absolute maximum ratings (Ta=25°C) ∗2 Body Diode <It is the same ratings for the Tr1 and Tr2>

Parameter Symbol Limits Unit Drain−source voltage VDSS

Gate−source voltage VGSS ±8

Continuous ID ±200 m A

Drain current

Pulsed IDP ±400 m A

∗2 m W / TOTAL

Total power dissipation PD

m W / ELEMENT120

Channel temperature Tch °C

Range of storage temperature Tstg −55 to +150 °C

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land.

Thermal resistance

Parameter Symbol Limits Unit

°C/W / TOTAL

Channel to ambient Rth(ch-a)

°C/W / ELEMENT1042

∗ Each terminal mounted on a recommended land

1/4 www.rohm.com 2009.07 - Rev.A

Page Summary Contents For ROHM EM6K7 Data Manual

Page 1 1.2V Drive Nch+Nch MOSFET EM6K7 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Applications Switching Features 1) The MOSFET elements are independent, Each lead has same dimensions eliminat...

Page 2 Data Sheet EM6K7 Electrical characteristics (Ta=25°C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS=±8V...

Page 3 Data Sheet EM6K7 ST AT IC AI -S -S TA TE ST AT IC AI -S -S TA TE ES IS TA : R on )[m ES IS TA : R S( on )[m S( AI EN : I [A Electrical characteristics curves VDS=10V Ta=25°C Pulsed VGS= 2.5V Pulsed VG...

Page 4 Data Sheet EM6K7 FO AR AN SF ER IT TA : | Yf s| [S 2.5 IT IN IM t ( ns VDS= 10V VGS=0V Ta=25°C ID= 0.2A Pulsed Pulsed Pulsed Ta=125°C Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.5 ID= 0.02A SOURCE-DRAIN VOLT...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	217.66 KB
Published	June 05, 2026

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Frequently Asked Questions

What type of devices is this MOSFET ideal for?

Because it features low voltage drive (1.2V), the device is particularly suited for portable equipment.

Are there any special safety precautions I need to take when using this component?

Yes, users must implement safety measures such as derating or redundancy and should not use it in systems critical to human life.

What guidelines are provided regarding mounting the MOSFET?

The manual specifies that each terminal must be mounted on a recommended land.

What is the specified range for its drain-source on-state resistance (RDS(on))?

At ID=200mA and VGS=1.5V, the RDS(on) ranges from 2.4 to 4.8 Ω.