ROHM EM6K33 Data Sheet

Summary

The EM6K33 is a high-speed N-channel MOSFET optimized for power switching applications requiring ultra-low voltage drive capabilities and minimal footprint in EMT6 packages. This product is designed for engineers developing general-use electronic equipment, including audio/visual and office automation devices. The accompanying documentation provides comprehensive technical details, including absolute maximum ratings, electrical characteristics, thermal analysis data, and detailed performance curves necessary for reliable circuit integration and optimized performance.

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1.2V Drive Nch + Nch MOSFET EM6K33 Structure Dimensions (Unit : mm) ilicon N-channel MOSFET

Features 1) High speed switing. 2) Small package(EMT6). 3) Ultra low voltage drive(1.2V drive).

Application Switching

Abbreviated symbol : K33

Packaging specifications Inner circuit

Package Taping (6) (5) (4)

Type Code T2R

Basic ordering unit (pieces)

EM6K33

(1) Tr1 Source

(2) Tr1 Gate (3) Tr2 Drain

(1) (2) (3) (4) Tr2 Source

(5) Tr2 Gate

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (6) Tr1 Drain

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Limits Unit

Drain-source voltage VDSS Gate-source voltage VGSS 8

Continuous ID 200 m A

Drain current

Pulsed IDP 800 m A Source current Continuous Is m A

(Body Diode) *1

Pulsed Isp m A m W / TOTAL

PDPower dissipation *2

m W / ELEMENT

Channel temperature Tch C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land.

Thermal resistance

Parameter Symbol Limits Unit

°C / W /TOTAL

Channel to ambient Rth (ch-a)

°C / W /ELEMENT

* Each terminal mounted on a recommended land.

www.rohm.com

1/5 2010.03 - Rev.B

Page Summary Contents For ROHM EM6K33 Data Sheet

Page 1 1.2V Drive Nch + Nch MOSFET EM6K33 Structure Dimensions (Unit : mm) ilicon N-channel MOSFET Features 1) High speed switing. 2) Small package(EMT6). 3) Ultra low voltage drive(1.2V drive). Applic...

Page 2 Data Sheet EM6K33 Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Symbol Min. Typ. Max. Unit Conditions Parameter Gate-source leakage IGSS 10 A VGS=8V, VDS=...

Page 3 Data Sheet EM6K33 IC IN -S -S IC IN -S -S IS (o ] IS (o ] IN [A Electrical characteristic curves 0.4 0.4 VGS= 4.5V Ta=25°C VDS= 10V VGS= 4.5V Pulsed VGS= 2.5V Pulsed VGS= 2.5V Ta=25°C VGS=1.8V 0.3 ...

Page 4 Data Sheet EM6K33 IT IN IM ns IT fs [S VDS= 10V VGS=0V Ta=25°C Pulsed Pulsed Pulsed ID= 20m A Ta= -25°C Ta=25°C ID=200m A Ta=75°C Ta=125°C Ta=125°C Ta=75°C Ta=25°C Ta=-25°C DRAIN-CURRENT : ID[A] SOURC...

Page 5 Data Sheet EM6K33 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms N...

Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	6
File Size	193.11 KB
Published	June 20, 2026

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Frequently Asked Questions

What is the primary benefit of this MOSFET?

It features high-speed switching, a small package (EMT6), and ultra low voltage drive capability (1.2V).

Is this component safe for life-critical applications like medical devices?

The product is not designed for any system requiring an extremely high level of reliability, such as aerospace machinery or medical instruments.

What are the electrical limits I need to observe?

The Gate-source voltage (Vgs) has a limit of ±8V, and the continuous drain current rating is 125 mA.

How do I ensure safe operation when using this product?

Users must implement safety measures like derating, redundancy, or fire control to guard against potential physical injury or damage.