ROHM EM6K31 Data Sheet

Summary

EM6K31 dual N-channel MOSFET in EMT6 package by ROHM. 2.5V drive, 60V Vds, 250mA Id, high-speed switching, built-in ESD protection. Ultra-small SMD package. For designers of portable devices needing compact dual MOSFET switching at low gate voltage.

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2.5V Drive Nch + Nch MOSFET EM6K31

Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features 1) High speed switing. 2) Small package(EMT6). 3) Low voltage drive(2.5V drive).

Abbreviated symbol : K31

Application Switching

Packaging specifications Inner circuit Package Taping (6) (5) (4)

Type Code T2R

Basic ordering unit (pieces)

EM6K31 ∗2

(1) Tr1 Source

∗1 (2) Tr1 Gate

(3) Tr2 Drain

Absolute maximum ratings (Ta = 25C)

(1) (2) (3) (4) Tr2 Source

∗1 ESD PROTECTION DIODE (5) Tr2 Gate

Parameter Symbol Limits Unit

∗2 BODY DIODE (6) Tr1 Drain

Drain-source voltage VDSS Gate-source voltage VGSS 20

Continuous ID 250 m A

Drain current

Pulsed IDP 1

Source current Continuous Is m A

(Body Diode) *1

Pulsed Isp

m W / TOTAL

PDPower dissipation *2

m W / ELEMENT

Channel temperature Tch C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land.

Thermal resistance

Parameter Symbol Limits Unit

°C / W /TOTAL

Channel to ambient Rth (ch-a)

°C / W /ELEMENT

* Each terminal mounted on a recommended land.

www.rohm.com

1/5 2010.09 - Rev.B

Page Summary Contents For ROHM EM6K31 Data Sheet

Page 1 2.5V Drive Nch + Nch MOSFET EM6K31 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) High speed switing. 2) Small package(EMT6). 3) Low voltage drive(2.5V drive). Abbreviated sy...

Page 2 Data Sheet EM6K31 Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=...

Page 3 Data Sheet EM6K31 IC IN -S -S IC IN -S -S IS (o ] IS (o ] IN [A Electrical characteristic curves Ta= 25C Ta= 25C VDS= 10V VGS= 10V Pulsed Pulsed Pulsed VGS= 4.5V VGS= 4.0V 0.1 VGS= 10V Ta=125C V...

Page 4 Data Sheet EM6K31 IT IN Is [A VGS=0V Ta=25C Ta=25C Pulsed td(off) Pulsed VDD= 30V tf VGS=10V 0.1 ID= 0.01A RG=10 Pulsed ID= 0.25A Ta=125C tr Ta=75C td(on) Ta=25C Ta=-25C SOURCE-DRAIN VOLTAGE :...

Page 5 Data Sheet EM6K31 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms N...

Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	6
File Size	190.07 KB
Published	June 16, 2026

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Frequently Asked Questions

What is the minimum gate drive voltage for the EM6K31?

It's a 2.5V drive MOSFET.

What is the absolute maximum drain-source voltage?

The maximum drain-source voltage (VDSS) is 60V.

What is the maximum continuous drain current?

The continuous drain current (ID) is ±250 mA.

What package does the EM6K31 use?

It uses a small EMT6 package.