ROHM DTD543ZE DTD543ZM Data Sheet
Summary
Streamline your electronic designs with these advanced NPN transistors, featuring integrated bias resistors optimized for interface, driving, and inverter applications. This comprehensive guide provides all necessary technical details, including absolute maximum ratings, detailed electrical characteristics tables, performance curves, and circuit examples, ensuring reliable component selection. Ideal for electronics designers crafting specialized equipment or signal pathways that require precise and low-power functionality.
Page 1 Text Content
DTD543ZE / DTD543ZM
Transistors
500m A / 12V Low VCE (sat) Digital transistors (with built-in resistors) DTD543ZE / DTD543ZM Applications Dimensions (Unit : mm) Inverter, Interface, Driver
DTD543ZE
Feature
1) VCE (sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of an 0.2
0.15 (1) GND
inverter circuit without connecting external input (2) IN
EMT3 1.0
(3) OUT
resistors (see equivalent circuit). JEITA No. (SC-75A) JEDEC No. <SOT-416> Each lead has same dimensions
3) The bias resistors consist of thin-film resistors with
Abbreviated symbol : Y23
complete isolation to allow negative biasing of the
input. They also have the advantage of almost DTD543ZM
completely eliminating parasitic effects. 1.2 0.32 4) Only the on / off conditions need to be set for (3)
operation, making the device design easy. (2)(1)
0.13 (1) IN
(2) GND
(3) OUT
Structure VMT3
Each lead has same dimensions
NPN epitaxial plannar silicon transistor
Abbreviated symbol : Y23
(Resistor built-in type)
Absolute maximum ratings (Ta=25°C) Packaging specifications 0. 1M in
Package EMT3 VMT3
Limits
Parameter Symbol Unit
Packaging type Taping Taping
DTD543ZE DTD543ZM
Code TL T2L
Supply voltage VCC
Input voltage VIN −5 to +12 Basic ordering Part No. unit (pieces)
Collector current ∗1 IC (max) m A
∗2 DTD543ZE
Power dissipation PD m W
DTD543ZM
Junction temperature Tj Storage temperature Tstg −55 to +150
∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land.
Electrical characteristics (Ta=25°C) Equivalent circuit
Parameter Symbol Min. Typ. Max. Unit Conditions
VI(off) 0.3 VCC= 5V, IO= 100µA
Input voltage R1 OUT
VI(on) 2.5 VO= 0.3V, IO= 20m A IN
Output voltage VO(on) m V IO/II= 100m A / 5m A R2
Input current II 1.4 m A VI= 5V GND
Output current IO(off) 0.5 µA VCC= 12V, VI=0V
IN OUT
DC current gain GI VO= 2V, IO= 100m A
Transition frequency f T MHz VCE= 10V, IE=−5m A, f=100MHz GND
Input resistance R1 3.29 4.7 6.11 kΩ Resistance ratio R2/R1 8.0
∗ Characteristics of built-in transistor.
Rev.A 1/2
Page Summary Contents For ROHM DTD543ZE DTD543ZM Data Sheet
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 3 |
| File Size | 103.87 KB |
| Published | June 02, 2026 |
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Frequently Asked Questions
What is the maximum collector current (IC) rating?
The maximum collector current is rated at 500 mA.
Can this device operate in negative bias?
Yes, the built-in resistors allow for complete isolation to enable negative biasing of the DTD543ZM input.
What is the suggested primary application for this transistor?
It is designed for applications like Inverters, Interfaces, and Drivers.
Does the part include necessary bias components for setup ease?
The built-in resistors allow setting up various circuits without connecting external inputs, simplifying design.