ROHM DTD543XE DTD543XM Data Sheet
Summary
Durable, low $V_{CE(\text{sat})}$ digital transistors designed for simplifying interface and driver circuit design. These advanced NPN components feature built-in bias resistors, eliminating the need for external input components and reducing parasitic effects. The associated manual provides comprehensive technical specifications, electrical characteristics, operating profiles, and application guidelines, making it ideal for engineers building reliable inverter and logic circuits.
Page 1 Text Content
DTD543XE / DTD543XM
Transistors
500m A / 12V Low VCE (sat) Digital transistors (with built-in resistors) DTD543XE / DTD543XM Applications Dimensions (Unit : mm) Inverter, Interface, Driver
DTD543XE
Feature
1) VCE (sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of an (2) (1) 0.2 0.2
inverter circuit without connecting external input resistors 0.15 (1) GND
(2) IN
(see equivalent circuit). 1.0
EMT3 (3) OUT JEITA No. (SC-75A)
3) The bias resistors consist of thin-film resistors with JEDEC No. <SOT-416>
Each lead has same dimensions
complete isolation to allow negative biasing of the
Addreviated symbol : X43
input. They also have the advantage of almost completely eliminating parasitic effects. DTD543XM 4) Only the on / off conditions need to be set for operation,
making the device design easy.
Structure 0.22
0.13 (1) IN
(2) GND
NPN epitaxial planar silicon transistor 0.8 0.
(3) OUT 0. 0. 0.
(Resistor built-in type) VMT3 1.
Each lead has same dimensions
Addreviated symbol : X43
0. 1M in
Absolute maximum ratings (Ta=25°C) Packaging specifications
Limits Package EMT3 VMT3
Parameter Symbol Unit
DTD543XE DTD543XM Packaging type Taping Taping Supply voltage VCC Code TL T2L
Input voltage VIN −7 to +12 Basic ordering Part No. unit (pieces)
Collector current ∗1 IC (max) m A
DTD543XE
Power dissipation PD m W
DTD543XM
Junction temperature ∗2 Tj
Storage temperature Tstg −55 to +150
∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land.
Electrical characteristics (Ta=25°C) Equivalent circuit
Parameter Symbol Min. Typ. Max. Unit Conditions
VI(off) 0.3 VCC= 5V, IO= 100µA
R1 OUT
Input voltage
VI(on) 2.5 VO= 0.3V, IO= 2m A
Output voltage VO(on) m V IO/II= 100m A / 5m A
Input current II 1.4 m A VI= 5V Output current IO(off) µA VCC= 12V, VI=0V
IN OUT
DC current gain GI VO= 2V, IO= 100m A
Transition frequency f T MHz VCE= 10V, IE=−5m A, f=100MHz GND
Input resistance R1 3.29 4.7 6.11 kΩ Resistance ratio R2/R1 1.7 2.1 2.6 R1=4.7kΩ / R2=10kΩ
∗ Characteristics of built-in transistor.
Rev.B 1/2
Page Summary Contents For ROHM DTD543XE DTD543XM Data Sheet
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 3 |
| File Size | 103.53 KB |
| Published | June 15, 2026 |
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Frequently Asked Questions
Do I need external resistors when configuring an inverter circuit?
No, the built-in bias resistors allow you to configure the inverter circuit without connecting external input resistors.
What is the maximum collector current this transistor can handle?
The absolute maximum rating for the collector current (IC max) is 500 mA.
Can I use this component in safety-critical equipment like medical devices?
No, if used in life-critical machinery, you must consult a sales representative due to reliability concerns.
What is the recommended supply voltage range for optimal operation?
The listed input voltage (VIN) range for the device is -7 V to +12 V.