ROHM DTD513ZE DTD513ZM Data Sheet
Summary
These low-voltage digital transistors are optimized for demanding application circuits, serving robust roles in interfaces, power drivers, and inverter designs. Featuring built-in resistors and exceptionally low saturation voltage, these components simplify circuit design by eliminating the need for excessive external connections. The accompanying technical documentation provides detailed electrical characteristics, absolute maximum ratings, and performance curves across various temperature ranges. This guide is essential for electronic engineers designing reliable and efficient control systems that require high switching accuracy.
Page 1 Text Content
500m A / 12V Low VCE (sat) Digital transistors (with built-in resistors) DTD513ZE / DTD513ZM Applications Dimensions (Unit : mm) Inverter, Interface, Driver
DTD513ZE
Feature 1) VCE (sat) is lower than conventional products. (2) (1)
2) Built-in bias resistors enable the configuration of 0.2 0.2
0.15 (1) GND
an inverter circuit without connecting external 0.50.5
(2) IN
EMT3 1.0
input resistors (see equivalent circuit). (3) OUT
JEITA No. (SC-75A)
3) The bias resistors consist of thin-film resistors with JEDEC No. <SOT-416>
Each lead has same dimensions
complete isolation to allow negative biasing of the input.
They also have the advantage of Abbreviated symbol : Y21
almost completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation, DTD513ZM
making the device design easy.
Structure 0.13 (1) IN
(2) GND
NPN epitaxial plannar silicon transistor
(3) OUT
(Resistor built-in type)
Each lead has same dimensions
Abbreviated symbol : Y21 0.
Packaging specifications
Package EMT3 VMT3 Packaging type Taping Taping 0. 1M in
Code TL T2L
Basic ordering Part No. unit (pieces)
DTD513ZE DTD513ZM
Absolute maximum ratings (Ta=25°C) Inner circuit
Limits
Parameter Symbol Unit
DTD513ZE DTD513ZM R1 OUT
Supply voltage VCC
Input voltage VIN −5 to +10
Collector current IC (max) m A
Power dissipation ∗2 PD m W
IN OUT
Junction temperature Tj
Storage temperature Tstg −55 to +150
∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land. R1=1.0kΩ / R2=10kΩ
1/2 www.rohm.com 2009.05 - Rev.B
○c 2009 ROHM Co., Ltd. All rights reserved.
Page Summary Contents For ROHM DTD513ZE DTD513ZM Data Sheet
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 3 |
| File Size | 178.71 KB |
| Published | June 01, 2026 |
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Frequently Asked Questions
Do I need external resistors for basic inverter operation?
No, the built-in bias resistors allow configuration of an inverter circuit without connecting external input resistors.
What are the maximum ratings for this transistor in terms of current and power?
The maximum collector current (IC) is 500 mA, and the maximum power dissipation (PD) is 150 mW at Ta=25°C.
Can these transistors be used in essential safety or life-critical devices?
No. These products are not designed for equipment requiring an extremely high level of reliability, such as medical instruments or transportation equipment.
What is the recommended operating temperature range?
The device can operate from a storage temperature (Tstg) of -55 to +150°C. The electrical characteristics table shows operation up to 125°C.