ROHM DTB723YE DTB723YM User Guide and Manual
Summary
The DTB723YE/DTB723YM is a specialized low V(sat) digital transistor designed for demanding interface, driver, and inverter applications. Featuring built-in resistors, this PNP planar device dramatically simplifies circuit design by eliminating the need for external input components. This manual provides comprehensive technical specifications, including electrical curves, absolute ratings, and detailed operational guides. It serves electronic designers building reliable circuits such as power inverters or signal drivers.
Page 1 Text Content
-200m A / -30V Low VCE (sat) Digital transistors (with built-in resistors) DTB723YE / DTB723YM Applications Dimensions (Unit : mm) Inverter, Interface, Driver
DTB723YE
Feature
1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors 0.2 0.2
0.15 (1) GND
(see equivalent circuit). 0.50.5
(2) IN
3) The bias resistors consist of thin-film resistors EMT3 1.0
(3) OUT
JEITA No. (SC-75A)
with complete isolation to allow positive biasing of the input.
JEDEC No. <SOT-416>
Each lead has same dimensions
They also have the advantage of almost completely eliminating parasitic effects. Abbreviated symbol : M52 4) Only the on / off conditions need to be set for operation, making the device design easy. DTB723YM
1.2 0.32 Structure (3)
PNP epitaxial plannar silicon transistor
(Resistor built-in type) 0.22
0.13 (1) IN
(2) GND
(3) OUT
Packaging specifications Each lead has same dimensions
Package EMT3 VMT3 0. 0. 0.
Abbreviated symbol : M52
Packaging type Taping Taping Code TL T2L
0. 1M in
Basic ordering Part No. unit (pieces)
DTB723YE DTB723YM
Absolute maximum ratings (Ta=25°C) Inner circuit
Limits
Parameter Symbol Unit
DTB723YE DTB723YM OUT
Supply voltage VCC −30
Input voltage VIN −15 to +5
GND(+)
Collector current IC (max) −200 m A
Power dissipation ∗2 PD m W
IN OUT
Junction temperature Tj
GND(+)
Storage temperature Tstg −55 to +150
∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land. R1=2.2kΩ / R2=10kΩ
1/2 www.rohm.com 2009.10 - Rev.C
○c 2009 ROHM Co., Ltd. All rights reserved.
Page Summary Contents For ROHM DTB723YE DTB723YM User Guide and Manual
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 3 |
| File Size | 185.49 KB |
| Published | July 12, 2026 |
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Frequently Asked Questions
How can I configure an inverter circuit using this transistor?
The built-in bias resistors enable configuration without requiring external input resistors.
What are the absolute maximum ratings and current limits?
The maximum collector current (IC) is -200 mA, and the junction temperature (Tj) limit is 150°C.
Are these transistors suitable for safety-critical systems?
No, they should not be used in equipment requiring extremely high reliability, such as medical or aerospace machinery.
What key advantage do the leads and structure offer during use?
The device features complete isolation and thin-film resistors, which helps almost completely eliminate parasitic effects.