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ROHM DTB713ZE Data Sheet

Summary

These low saturation voltage digital transistors are perfect for designing robust inverter, interface, and driver circuits. Featuring built-in bias resistors and superior isolation, the DTB713 series significantly simplifies circuit setup by eliminating the need for external input components. This manual details electrical characteristics, maximizing efficiency and ease of use for electronics engineers tackling demanding power management applications.

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-200m A / -30V Low VCE (sat) Digital transistors (with built-in resistors) DTB713ZE / DTB713ZM Applications Dimensions (Unit : mm) Inverter, Interface, Driver

DTB713ZE

Feature

1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of (2) (1)

an inverter circuit without connecting external input resistors 0.2 0.2

0.15 (1) GND

(see equivalent circuit). 0.50.5

(2) IN

EMT3 1.0

3) The bias resistors consist of thin-film resistors with (3) OUT

JEITA No. (SC-75A)

complete isolation to allow positive biasing of the input. JEDEC No. <SOT-416>

Each lead has same dimensions

They also have the advantage of almost completely

eliminating parasitic effects. Abbreviated symbol : P11

4) Only the on / off conditions need to be set for operation,

making the device design easy. DTB713ZM

Structure

PNP epitaxial plannar silicon transistor 0.13 (1) IN

(2) GND

(Resistor built-in type)

(3) OUT

Each lead has same dimensions

Abbreviated symbol : P11 0.

Packaging specifications 0. 0. 0.

Package EMT3 VMT3 Packaging type Taping Taping

0. 1M in

Code TL T2L

Basic ordering Part No. unit (pieces)

DTB713ZE DTB713ZM

Absolute maximum ratings (Ta=25°C) Inner circuit

Limits

Parameter Symbol Unit

DTB713ZE DTB713ZM

R1 OUT

Supply voltage VCC −30

Input voltage VIN −10 to +5

GND(+)

Collector current IC (max) −200 m A

Power dissipation PD m W

IN OUT

Junction temperature Tj

GND(+)

Storage temperature Tstg −55 to +150

∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land.

1/2 www.rohm.com 2009.05 - Rev.B

○c 2009 ROHM Co., Ltd. All rights reserved.

Page Summary Contents For ROHM DTB713ZE Data Sheet

Page 1 -200m A / -30V Low VCE (sat) Digital transistors (with built-in resistors) DTB713ZE / DTB713ZM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTB713ZE Feature 1) VCE (sat) is lower th...
Page 2 Data Sheet DTB713ZE / DTB713ZM EN AI IN PU VO LT AG : V I ( on ) ( V) Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions VI(off) −0.3 VCC= −5V, IO= −100µA Input volta...
Page 3 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand ROHM
Pages 3
File Size 179.15 KB
Published July 16, 2026
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Frequently Asked Questions

How can I configure an inverter circuit?

You can use the built-in bias resistors, which enable configuration without connecting external input resistors.

What are the maximum operating ratings for this transistor?

The max collector current is -200 mA, and the power dissipation (Pd) is 150 mW at 25°C.

What voltage range should I use for the input signal (Vin)?

The recommended range for the Input Voltage (VIN) is from -10 to +5 V, given a VCC of -30V.