ROHM BD3533HFN Data Sheet

STRUCTURE Silicon Monolithic Integrated Circuit TYPE Regulator IC for Memory termination PRODUCT SERIES BD3533HFN FEATURES ・Incorporates a push-pull power supply for termination (VTT) ・Incorporates a reference voltage circuit(VREF) ・Compatible with Dual Channel (DDR-Ⅱ)

○ ABSOLUTE MAXIMUM RATINGS (Ta=100℃)

Parameter Symbol Limit Unit

Input Voltage VCC 7 *1*2 V Enable Input Voltage VEN 7 *1*2 V Termination Input Voltage VTT_IN 7 *1*2 V VDDQ Reference Voltage VDDQ 7 *1*2 V Output Current ITT 1 A Power Dissipation1 Pd1 630 *3 m W Power Dissipation2 Pd2 1350 *4 m W Power Dissipation3 Pd3 1750 *5 m W Operating Temperature Range Topr -30～+100 Storage Temperature Range Tstg -55～+150 Maximum Junction Temperature Tjmax +150 ℃ *1 Should not exceed Pd. *2 Instantaneous surge voltage, back electromotive force and voltage under less than 10% duty cycle. *3 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board (copper foil density 0.2%) θja=198.4℃/Ｗ *4 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board (copper foil density 7%) θja=92.4℃/Ｗ *5 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board (copper foil density 65%) θja=71.4℃/Ｗ

○ RECOMMENDED OPERATING CONDITIONS (Ta=25℃)

PARAMETER SYMBOL MIN MAX UNIT

Input Voltage VCC 2.7 5.5 V Termination Input Voltage VTT_IN 1.0 5.5 V VDDQ Reference Voltage VDDQ 1.0 2.75 V Enable Input Voltage VEN -0.3 5.5 V ★ No radiation-resistant design is adopted for the present product.

The Japanese version of this document is the official specification. This translated version is intended only as a reference, to aid in understanding the official version. If there are any differences between the original and translated versions of this document, the official Japanese language version takes priority.

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