ROHM 2SD1898 2SD1733 Data Sheet

Summary

Discover the performance and reliability of these NPN silicon power transistors (2SD1898 / 2SD1733), ideal for switching circuits requiring high current capacity up to 1A(DC) and a robust 80V VCEO rating. This comprehensive technical guide provides detailed absolute maximum ratings, electrical characteristics, saturation voltage curves, and capacitance data. It is essential reading for electronics designers, engineers, or hardware developers integrating dependable power amplification components into various electronic applications, ensuring optimal performance and safety standards.

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ROHM 2SD1898 2SD1733 Data Sheet - Page 1

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Page 1 Text Content

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 Features Dimensions (Unit : mm) 1) High VCEO, VCEO=80V

2) High IC, IC=1A (DC) 2SD1898

3) Good h FE linearity −0.1

4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181

Structure

(1) Base

Epitaxial planer type

ROHM : MPT3

(2) Collector

NPN silicon transistor EIAJ : SC-62

(3) Emitter

Abbreviated symbol : DF

2SD1733

ROHM : CPT3 (1) Base EIAJ : SC-63 (2) Collector

(3) Emitter 1.

Absolute maximum ratings (Ta=25C)

Parameter Symbol Limits Unit

Collector-base voltage VCBO

Collector-emitter voltage VCEO

Emitter-base voltage VEBO

A (DC)

Collector current IC

A (Pulse)∗1

2SD1898

Collector power

dissipation

2SD1733

W (Tc=25°C)

Junction temperature Tj °C

Storage temperature Tstg −55 to +150 °C ∗1 Pw=20ms, duty=1 / 2 ∗2 When mounted on a 40×40×0.7mm ceramic board.

www.rohm.com

1/3 2012.01 - Rev.E

Page Summary Contents For ROHM 2SD1898 2SD1733 Data Sheet

Page 1 Power Transistor (80V, 1A) 2SD1898 / 2SD1733 Features Dimensions (Unit : mm) 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 2SD1898 3) Good h FE linearity −0.1 4) Low VCE (sat) 5) Complements the 2SB...

Page 2 Data Sheet 2SD1898 / 2SD1733 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO A (DC) Collector curr...

Page 3 Data Sheet 2SD1898 / 2SD1733 LL IC LL TO TU TI LT (s at ) ( LL IC Electrical characteristic curves Ta=25°C Ta=25°C Ta=25°C VCE=5V 3m A VCE=3V IB=0m A BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EM...

Page 4 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	4
File Size	158.25 KB
Published	June 18, 2026

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Frequently Asked Questions

What is the absolute maximum collector current ($ ext{I}_C$) this transistor can handle?

The maximum rated collector current ($ ext{I}_C$) exceeds $2 ext{ A}$ for a pulse rating.

Can I use these transistors in life-critical or safety equipment?

No, they are not designed for applications requiring an extremely high level of reliability, such as medical instruments or nuclear-reactor controllers.

What is the typical Collector-Emitter saturation voltage ($ ext{V}_{CE( ext{sat})}$)?

The typical saturated voltage ($ ext{V}_{ ext{CE(sat)}}$) is $0.4 ext{ V}$ at an $ ext{I}_C/ ext{I}_B$ ratio of $500 ext{ mA}/50 ext{ mA}.