ROHM 2SB1732 User Guide and Manual

2SB1732

Transistors

Genera purpose amplification(−12V, −1.5A) 2SB1732

Application Dimensions (Unit : mm)

Low frequency amplifier Driver

Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ −200m V

ROHM : TUMT3 Abbreviated symbol : EV (1)Base

at IC = −500m A / IB = −25m A

(2)Emitter (3)Collector

Absolute maximum ratings (Ta=25°C) Packaging specifications

Parameter Symbol Limits Unit Package Taping

Collector-base voltage VCBO −15

Type Code TL

Collector-emitter voltage VCEO −12

Basic ordering unit (pieces)

Emitter-base voltage VEBO −6 0. 2M ax

2SB1732

IC −1.5

Collector current

ICP −3

Power dissipation PC m W Junction temperature Tj °C Range of storage temperature Tstg −55 to +150 °C

∗1 Single pulse, PW=1ms ∗2 Each Terhinal Mounted on a Recommended Land

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO −15 IC=−10µA Collector-emitter breakdown voltage BVCEO −12 IC=−1m A Emitter-base breakdown voltage BVEBO −6 IE=−10µA

Collector cutoff current ICBO −100 n A VCB=−15V

Emitter cutoff current IEBO −100 n A VEB=−6V Collector-emitter saturation voltage VCE(sat) −85 −200 m V IC=−500m A, IB=−25m A

DC current gain h FE VCE=−2V, IC=−200m A Transition frequency f T MHz VCE=−2V, IE=200m A, f=100MHz

Corrector output capacitance Cob p F VCB=−10V, IE=0A, f=1MHz

∗ Pulsed

Rev.B 1/2