ROHM 2SB1705 User Guide and Manual

2SB1705

Transistors

Low frequency amplifier 2SB1705

Application External dimensions (Unit : mm)

Low frequency amplifier

TSMT3

Driver

1.0MAX

Features (3)

1) A collector current is large.

2) VCE(sat) ≤ −250m V (2)(1) 0.950.95

At IC=−1.5A / IB=−30m A 0.16

(1) Base (2) Emitter

(3) Collector Each lead has same dimensions

Absolute maximum ratings (Ta=25°C) Equivalent circuit

Parameter Symbol Limits Unit

Collector-base voltage VCBO −15

Collector-emitter voltage VCEO −12 2. Emitter-base voltage VEBO −6 IC −3

Collector current

ICP −6

Power dissipation PC m W

Junction temperature Tj °C Range of storage temperature Tstg −55 to +150 °C ∗1 Single pulse, PW=1ms ∗2 Each Termminal Mounted on a Recommended

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO −15 IC= −10µA

Collector-emitter breakdown voltage BVCEO −12 IC= −1m A

Emitter-base breakdown voltage BVEBO −6 IE= −10µA

Collector cutoff current ICBO −100 n A VCB= −15V

Emitter cutoff current IEBO −100 n A VEB= −6V

Collector-emitter saturation voltage VCE(sat) −120 −250 m V IC= −1.5A, IB= −30m A DC current gain h FE VCE= −2V, IC= −500m A Transition frequency f T 280 − MHz VCE= −2V, IE=500m A, f=100MHz

Collector output capacitance Cob p F VCB= −10V, IE=0A, f=1MHz

∗ Pulsed

Rev.C 1/2