ROHM 2SB1561 User Guide and Manual

Summary

The 2SB1561 is a medium power PNP transistor designed for efficiency with a low saturation voltage (typically -0.15V) and a collector-emitter voltage of -60V. This technical datasheet provides essential specifications, including absolute maximum ratings, electrical characteristics, and detailed performance curves such as DC current gain and safe operating area. It is intended for electronic engineers and circuit designers seeking a complementary match for the 2SD2391 transistor in general-use electronic equipment.

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ROHM 2SB1561 User Guide and Manual - Page 1

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Medium Power Transistor (−60V, −2A) 2SB1561

Features Dimensions (Unit : mm)

1) Low saturation voltage , typically

VCE (sat) = −0.15V at IC / IB = −1A / −50m A. 2) Collector-emitter voltage = −60V 4.5

3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SD2391.

1.51.5 (1)Base 3.0

(2)Collector (3)Emitter

Absolute maximum ratings (Ta=25C)

Parameter Symbol Limits Unit Collector-base voltage VCBO −60 Collector-emitter voltage VCEO −60

Emitter-base voltage VEBO −6

IC −2

Collector current

ICP −6

Collector power dissipation PC

Junction temperature Tj °C

Storage temperature Tstg −55 to +150 °C

∗1 Single pulse, Pw=10ms

∗2 When mounted on a 40 40 0.7mm ceramic board.+ 4. 02.

Electrical characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO −60 IC=−50μA

Collector-emitter breakdown voltage BVCEO −60 IC=−1m A Emitter-base breakdown voltage BVEBO −6 IE=−50μA

Collector cutoff current ICBO −0.1 μA VCB=−50V

Emitter cutoff current IEBO −0.1 μA VEB=−5V

Collector-emitter saturation voltage VCE(sat) −0.15 −0.35 IC/IB=−1A/−50m A

h FE1 VCE/IC=−2V/−0.5A

DC current transfer ratio

h FE2 VCE/IC=−2V/−1.5A45

Transition frequency f T MHz VCE=−2V, IE=0.5A, f=100MHz Output capacitance Cob p F VCB=−10V, IE=0A, f=1MHz

∗ Measured using pulse current

Packaging specifications and h FE

Type 2SB1561

Package MPT3

Marking BL∗ Code T100

Basic ordering unit (pieces) ∗Denotes h FE

www.rohm.com

1/2 2009.12 - Rev.A

Page Summary Contents For ROHM 2SB1561 User Guide and Manual

Page 1 Medium Power Transistor (−60V, −2A) 2SB1561 Features Dimensions (Unit : mm) 1) Low saturation voltage , typically VCE (sat) = −0.15V at IC / IB = −1A / −50m A. 2) Collector-emitter voltage = −60V 4....

Page 2 Data Sheet 2SB1561 IT IO f T (M z) IN h F LL l C (A  Electrical characteristic curves VCE= −2V VCE=2V −1.6 −8m A −1 Ta=100°C 25°C −6m A −0.5 Pw=10m −0.2 DC IB=−2m A −0.02 COLLECTOR TO EMITTER VOLTAGE...

Page 3 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	3
File Size	169.81 KB
Published	June 18, 2026

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Frequently Asked Questions

What voltage range is safe for this transistor to operate at?

The maximum collector-emitter voltage (VCEO) and absolute collector-base voltage are rated up to −60V.

Can I use this product in medical or transportation equipment?

No, the products are not designed for systems requiring an extremely high level of reliability; contact a sales representative for special purpose use.

What is the typical power dissipation limit for normal operation?

The collector power dissipation (Pc) is specified as 2W when mounted on a 40x40x0.7mm ceramic board.

What is the guaranteed transition frequency ($f_T$) of the device?

The transition frequency $f_T$ is listed at −200 MHz under specific operating conditions (VCE=−2V, IE=0.5A, f=100MHz).