ROHM 2SB1427 Data Sheet

2SB1427

Transistors

Power transistor (−20V, −2A) 2SB1427

Features External dimensions (Unit : mm)

1) Low saturation voltage,

VCE : Max . −0.5V at IC/IB = −1A / −50m A.

2) Excellent DC current gain characteristics.

(1) Base (2) Collector (3) Emitter

ROHM : MPT3 EIAJ : SC-62

Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit

Collector-base voltage VCBO −20

1. 1. Collector-emitter voltage VCEO −20 0. 0. 0. 0.

Emitter-base voltage VEBO −6

−2 A(DC)

Collector current IC

−3 A(Pulse) ∗1

Collector power dissipation PC ∗2 1.

Junction temperature Tj °C Tstg −55 ~ +150 °CStorage temperature

∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40×40×0.7mm ceramic board.

Packaging specifications and h FE

Type 2SB1427

Package MPT3

Marking BJ Code T100

Basic ordering unit (pieces) Denotes h FE∗

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO −20 IC = −50µA Collector-emitter breakdown voltage BVCEO −20 IC = −1m A Emitter-base breakdown voltage BVEBO −6 IE = −50µA Collector cutoff current ICBO −0.5 µA VCB = −16V Emitter cutoff current IEBO −0.5 µA VEB = −5V

Collector-emitter saturation voltage VCE(sat) −0.5 IC/IB = −1A/−50m A

DC current transfer ratio h FE VCE/IC = −6V/−0.5A Transition frequency f T MHz VCE = −10V , IE = 10m A , f= 100MHz Output capacitance Cob p F VCB = −10V , IE = 0A , f = 1MHz

Measured using pulse current.∗

Rev.A 1/2