ROHM 2SAR552P Data Sheet

Summary

This medium-power PNP Silicon transistor is designed for reliable, high-speed switching applications and general electronic driving (e.g., audio, communication equipment). The accompanying manual provides comprehensive technical documentation required by engineers, including absolute maximum ratings, detailed electrical characteristics, saturation curves, and performance graphs like Vce(sat) data. It ensures precise integration into various core electronic systems.

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Midium Power Transistors (-30V / -3A) 2SAR552P

Structure Dimensions (Unit : mm) PNP Silicon epitaxial planar transistor

Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50m A)

2) High speed switching

Applications

Abbreviated symbol : MF

Driver

Packaging specifications Inner circuit (Unit : mm)

Package Taping

Type Code T100

Basic ordering unit (pieces)

2SAR552P

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Limits Unit (1) Base (2) Collector

Collector-base voltage VCBO -30

(3) Emitter

Collector-emitter voltage VCEO -30

Emitter-base voltage VEBO -6

DC IC -3

Collector current

Pulsed ICP *1 -6 *2 PD 0.5

Power dissipation

*3 PD

Junction temperature Tj C Range of storage temperature Tstg -55 to 150 C *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm³)

www.rohm.com

1/4 2009.12 - Rev.A

Page Summary Contents For ROHM 2SAR552P Data Sheet

Page 1 Midium Power Transistors (-30V / -3A) 2SAR552P Structure Dimensions (Unit : mm) PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / ...

Page 2 Data Sheet 2SAR552P Electrical characteristic (Ta = 25C) Symbol Min. Typ. Max. Unit Conditions Parameter Collector-emitter breakdown voltage BVCEO -30 IC= -1m A Collector-base breakdown voltage BVC...

Page 3 Data Sheet 2SAR552P LL CE OT UPT APA NATI C : )Fp(bo CELL OT UTAS OITA OV GATL : E tas( )[V CELL OT NE : T IC [A Electrical characteristic curves ME TI RET NI UP C T CAPA NATI C : E )Fp(bi Ta=25°C V...

Page 4 Data Sheet 2SAR552P Switching time test circuit RL=6.7Ω VCC -10V~_ Pw 50μs DUTY CYCLE1% BASE CURENT WAVEFORM tstgton tf COLLECTOR CURRENT WAVEFORM IC www.rohm.com 4/4 2009.12 - Rev.A ○c 2009 ROHM Co...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	236.56 KB
Published	July 07, 2026

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Frequently Asked Questions

What is the permissible junction temperature range for this transistor?

The junction temperature (Tj) can operate within -55 to 150°C.

How should I physically mount the device?

It must be mounted on a recommended land or specifically when operating on a ceramic board.

Is this component suitable for critical life-support systems?

No, it is not designed for equipment requiring extremely high reliability, such as life support or aerospace machinery.

What are the key high-frequency performance specifications?

The transition frequency (fT) provides a capability of up to -330 MHz.