ROHM 2SAR522M, 2SAR522EB, 2SAR522EB User Manual and Specifications

General purpose transistor(-20V,-0.2A) 2SAR522M / 2SAR522EB / 2SAR522UB Structure Dimensions (Unit : mm) PNP silicon epitaxial planar transistor VMT3

Features Complements the 2SCR522M / 2SCR522EB / 2SCR522UB.

Abbreviated symbol : PC

Applications

Switch, LED driver EMT3F

Packaging specifications

Package VMT3 EMT3F UMT3F (1) (2)

Packaging Type Taping Taping Taping

Abbreviated symbol : PC

Code T2L TL TL

UMT3F

Basic ordering 0.32 0.9 unit (pieces) (3)

2SAR522M

2SAR522EB

2SAR522UB

Abbreviated symbol : PC

 Absolute maximum ratings (Ta=25C) Inner circuit

Parameter Symbol Limits Unit (3)

Collector-base voltage VCBO −20

Collector-emitter voltage VCEO −20

Emitter-base voltage VEBO −5

IC m A−200 (1) Base

Collector current (2) Emitter

∗1 ICP m A−400 (3) Collector

2SAR522M,2SAR522EB m W

Power ∗2

dissipation

2SAR522UB m W

Junction temperature Tj °C

Storage temperature Tstg −55 to +150 °C

∗1 Pw=1m S Single pulse ∗2 Each terminal mounted on a recommended land

Electrical characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-emitter breakdown voltage BVCEO −20 IC= −1m A

Collector-base breakdown voltage BVCBO −20 IC= −50μA

Emitter-base breakdown voltage BVEBO −5 IE= −50μA Collector cut-off current ICBO −0.1 μA VCB= −20V Emitter cut-off current IEBO −0.1 μA VEB= −5V Collector-emitter saturation voltage VCE(sat) −0.12 −0.30 IC= −100m A, IB= −10m A

DC current gain h FE VCE= −2V, IC= −1m A Transition frequency f T MHz VCE= −10V, IE=10m A, f=100MHz Cob p F VCB= −10V, IE=0A, f=1MHz Output capacitance

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1/2 2010.09 - Rev.A

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