ROHM 2SAR512P Data Sheet

Summary

2SAR512P PNP epitaxial planar transistor, -30V/-2A. Low Vce(sat) -0.4V typical, high-speed switching, hFE 200-500, 430MHz fT. MPT3 surface-mount package, 0.5W dissipation. For circuit designers needing PNP transistors in driver, power management, and amplifier applications.

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Medium Power Transistors (−30V / −2A) 2SAR512P

Structure Dimensions (Unit : mm) PNP Silicon epitaxial planar transistor MPT3

Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -700m A / -35m A)

2) High speed switching

(1)Base

Applications (2)Collector

Abbreviated symbol : MB

(3)Emitter

Driver

Packaging specifications Inner circuit (Unit : mm)

Package Taping

Type Code T100 Basic ordering unit (pieces) 2SAR512P

Absolute maximum ratings (Ta = 25°C)

Parameter Symbol Limits Unit (1) Base (2) Collector

Collector-base voltage VCBO -30 (3) Emitter

Collector-emitter voltage VCEO -30

Emitter-base voltage VEBO -6

DC IC -2

Collector current

Pulsed ICP *1 -4 *2 PD 0.5

Power dissipation

*3 PD

Junction temperature Tj °C Range of storage temperature Tstg -55 to 150 °C *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm³)

1/4 www.rohm.com 2009.10 - Rev.A

Page Summary Contents For ROHM 2SAR512P Data Sheet

Page 1 Medium Power Transistors (−30V / −2A) 2SAR512P Structure Dimensions (Unit : mm) PNP Silicon epitaxial planar transistor MPT3 Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC ...

Page 2 Data Sheet 2SAR512P Electrical characteristic (Ta = 25°C) Symbol Min. Typ. Max. Unit Conditions Parameter Collector-emitter breakdown voltage BVCBO -30 IC= -1ｍA Collector-base breakdown voltage BVCEO ...

Page 3 Data Sheet 2SAR512P LL TO TP IT ob (p F) LL TO TU TI LT IT TE IN IT ib (p F) (s at )[V LL TO : I [A Electrical characteristic curves Ta=25 VCE= -2V -0.30 VCE= -5V -2V Ta=125 COLECTOR TO EMITTER VOLTAG...

Page 4 Data Sheet 2SAR512P Switching time test circuit RL=10Ω VCC -10V~_ Pw 50µs DUTY CYCLE≦1% BASE CURENT WAVEFORM tstgton tf *1 Pw=10ms, Single Pulse COLLECTOR CURRENT WAVEFORM IC *3 Mounted on a ceramic b...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	221.01 KB
Published	June 16, 2026

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Frequently Asked Questions

What is the maximum collector current for the 2SAR512P transistor?

The DC maximum is -2A, and the pulsed maximum is -4A.

What is the typical collector-emitter saturation voltage?

It is typically -0.4V max at I_C=-700mA and I_B=-35mA.

What is the storage temperature range for this transistor?

The storage temperature range is -55 to 150°C.

What are the typical applications of the 2SAR512P?

It is used as a driver in general electronic equipment.