Philips MZ0912B50Y NPN Microwave Power Transistor Data Sheet

Summary

This manual details the technical specifications for the MZ0912B50Y NPN microwave power transistor. Designed for common base, class C applications, it offers high performance up to 50W in the 0.96 to 1.215 GHz range. Ideal for broadband amplifier and pulse power applications, it features a robust SOT443A package and gold metallization.

📄 Preview ‹ PAGE OF 12 ›

‹

Philips MZ0912B50Y NPN Microwave Power Transistor Data Sheet - Page 1

›

Page 1 Text Content

DISCRETE SEMICONDUCTORS

DATA SHEET

MZ0912B50Y NPN microwave power transistor

Product specification Feb

Supersedes data of November

Page Summary Contents For Philips MZ0912B50Y NPN Microwave Power Transistor Data Sheet

Page 1 DISCRETE SEMICONDUCTORS DATA SHEET MZ0912B50Y NPN microwave power transistor Product specification Feb Supersedes data of November

Page 2 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y FEATURES QUICK REFERENCE DATA Microwave performance up to Tmb °C in a common base class Interdigitated structure ...

Page 3 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN....

Page 4 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y THERMAL CHARACTERISTICS Tj °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal ...

Page 5 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y 30 mm 30 mm handbook, full pagewidth mm 6.5 mm MCD634 handbook, full pagewidth C3 +VCC MGL064 Substrate: Epsilam ...

Page 6 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y MGL052 MGL053 handbook, halfpage handbook, halfpage PL ηC (W) 0.95 1.05 1.15 1.25f (GHz) 0.95 1.05 1.15 1.25f (GH...

Page 7 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y handbook, full pagewidth 0.960 GHz 1.215 GHz MGL050 VCC V; Zo Ω; PL W. Fig.7 Input impedance as a function of fre...

Page 8 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y PACKAGE OUTLINE 24 max handbook, full pagewidth 6.4 max seating plane 1.7 max 4 min 3.4 10.5 10.5 3.2 max max max...

Page 9 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for ...

Page 10 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y NOTES

Page 11 Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y NOTES

Page 12 Philips Semiconductors – a worldwide company Argentina: see South America Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 82785, Fax. +31 Australia: 34 Waterloo Road, NORTH RYDE, NSW...

Manual Details

Brand	Philips
Pages	12
File Size	90.73 KB
Published	June 22, 2026

12 views

Enter the captcha to get the download link:

Frequently Asked Questions

How is the MZ0912B50Y transistor pinned?

Pin 1 is collector, pin 2 is emitter, and pin 3 is base connected to flange.

What frequency range and application is it designed for?

It operates from 960 to 1215 MHz for TACAN pulse power amplification in class C.

What safety precautions are needed?

It contains beryllium oxide; if undamaged it is safe. Dispose as chemical/special waste per local regulations.

What are the typical power output and gain?

At 25°C, typical peak output power is 60 W with >7 dB gain and >42% efficiency.

What is the thermal resistance from junction to mounting base?

The maximum thermal resistance Rth j-mb is 4.9 K/W at 125°C junction temperature.