PHILIPS LTE42008R NPN Microwave Power Transistor Data Sheet
Summary
Philips semiconductor discrete component datasheet. Documents maximum ratings (voltage, current, power dissipation), thermal characteristics, DC/AC electrical specifications, typical performance curves, S-parameters for RF applications, package mechanical drawings, marking codes, and ESD handling precautions in antistatic packaging.
Page 1 Text Content
DISCRETE SEMICONDUCTORS
DATA SHEET
LTE42008R NPN microwave power transistor
Product specification Feb
Supersedes data of June 1992 File under Discrete Semiconductors, SC15
Page Summary Contents For PHILIPS LTE42008R NPN Microwave Power Transistor Data Sheet
Manual Details
| Brand | Philips |
|---|---|
| Pages | 12 |
| File Size | 78.20 KB |
| Published | June 18, 2026 |
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Frequently Asked Questions
What critical safety precautions apply when handling this component?
The product contains beryllium oxide (BeO), which is safe only if the slab is not damaged. Disposal requires treating it as chemical or special waste.
In what high-frequency applications is this transistor best used?
It is designed for common emitter class-A linear power amplifiers operating up to 4.2 GHz.
What are the maximum operation limits for power dissipation?
The total power dissipation ($P_{tot}$) cannot exceed 7.5 W under normal conditions (T ≤ 75°C).
What specific benefit do diffused emitter ballasting resistors offer in this package?
They provide excellent current sharing capabilities and ensure the transistor can withstand a high VSWR.