Philips PDTC123ET NPN Resistor-Equipped Transistor Data Sheet
Summary
Discrete semiconductor datasheet for the Philips PDTC123ET NPN resistor-equipped transistor in SOT23 package. Built-in bias resistors R1 and R2 (2.2 kOhm each typ) simplify circuit design and reduce board space. Specifications include 50V collector-emitter voltage max, 100mA collector current, 250mW total power dissipation at 25 degrees C ambient, and 500 K/W junction-to-ambient thermal resistance. PNP complement is PDTA123ET. Applications include interface/driver circuits and inverter configurations. Marking code 26.
Page 1 Text Content
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PDTC123ET NPN resistor-equipped transistor
Product specification May
Supersedes data of 1998 May
Page Summary Contents For Philips PDTC123ET NPN Resistor-Equipped Transistor Data Sheet
Manual Details
| Brand | Philips |
|---|---|
| Pages | 8 |
| File Size | 55.95 KB |
| Published | June 16, 2026 |
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Frequently Asked Questions
How does this transistor simplify circuit design?
It features built-in bias resistors R1 and R2, which significantly reduces the number of components needed and saves board space.
What is the maximum total power dissipation allowed?
The total power dissipation (P_D) must be less than -250 mW when operating on an FR4 printed circuit board at 25°C.
Which pin functions as the emitter/ground connection?
Pin 2 corresponds to the emitter and should be connected to ground.
What is the specified operational temperature range?
The acceptable operating ambient temperature (T_amb) ranges from -65°C to +150°C amb.