Philips PUMH9 NPN Resistor-Equipped Double Transistor Data Manual/Specifications
Summary
Technical specification for 查询PUMH9供应商 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMH9 NPN resistor-equipped double transistor 1999 May 06 Product specificationPhilips Semiconductors Product specification NPN resist. This datasheet provides comprehensive electrical characteristics, pin configurations, thermal parameters, and application information. Includes graphs, charts, and technical data for proper component selection and implementation. Essential reference for circuit desig...
Page 1 Text Content
查询PUMH9供应商
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PUMH9 NPN resistor-equipped double transistor
Product specification May
Page Summary Contents For Philips PUMH9 NPN Resistor-Equipped Double Transistor Data Manual/Specifications
Manual Details
| Brand | Philips |
|---|---|
| Pages | 8 |
| File Size | 71.82 KB |
| Published | June 18, 2026 |
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Frequently Asked Questions
What is the primary advantage of using this double transistor?
It simplifies circuit design by reducing the need for external resistors and minimizing component count and board space.
What absolute maximum collector-collector voltage can be handled?
The value for Vcbo (open emitter) is -50 V, and for Vcebo (open base) is −50 V.
Where should the device be mounted when calculating power dissipation?
It must be mounted on an FR4 printed-circuit board.
What are the typical input resistors used in the built-in configuration?
The internal bias resistors are typically R1 (10 kΩ) and R2 (47 kΩ).